| Method of monitoring deposit in chamber, method of plasma processing, method of dry-cleaning chamber, and semiconductor manufacturing apparatus K Eriguchi US Patent 5,897,378, 1999 | 264 | 1999 |
| Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices K Eriguchi, K Ono Journal of Physics D: Applied Physics 41 (2), 024002, 2008 | 116 | 2008 |
| Hydrogen‐atom spectroscopy of the ionizing plasma containing molecular hydrogen: Line intensities and ionization rate K Sawada, K Eriguchi, T Fujimoto Journal of applied physics 73 (12), 8122-8125, 1993 | 107 | 1993 |
| MIS device, method of manufacturing the same, and method of diagnosing the same T Yamada, T Nakabayashi, M Arai, T Yabu, K Eriguchi US Patent 5,903,031, 1999 | 88 | 1999 |
| True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM Z Wei, Y Katoh, S Ogasahara, Y Yoshimoto, K Kawai, Y Ikeda, K Eriguchi, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.8. 1-4.8. 4, 2016 | 81 | 2016 |
| Method of manufacturing aggregate of semiconductor micro-needles K Eriguchi, M Kubota, M Niwa, N Nomura US Patent 6,033,928, 2000 | 65 | 2000 |
| A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis Y Takao, K Eriguchi, K Ono Journal of Applied Physics 101 (12), 2007 | 64 | 2007 |
| Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster Y Takao, H Koizumi, K Komurasaki, K Eriguchi, K Ono Plasma sources science and technology 23 (6), 064004, 2014 | 57 | 2014 |
| Defect generation in electronic devices under plasma exposure: Plasma-induced damage K Eriguchi Japanese Journal of Applied Physics 56 (6S2), 06HA01, 2017 | 56 | 2017 |
| Structural and electrical characterization of HBr/O2 plasma damage to Si substrate M Fukasawa, Y Nakakubo, A Matsuda, Y Takao, K Eriguchi, K Ono, ... Journal of Vacuum Science & Technology A 29 (4), 2011 | 55 | 2011 |
| Effects of plasma-induced Si recess structure on n-MOSFET performance degradation K Eriguchi, A Matsuda, Y Nakakubo, M Kamei, H Ohta, K Ono IEEE electron device letters 30 (7), 712-714, 2009 | 55 | 2009 |
| Optical and electrical characterization of hydrogen-plasma-damaged silicon surface structures and its impact on in-line monitoring Y Nakakubo, A Matsuda, M Fukasawa, Y Takao, T Tatsumi, K Eriguchi, ... Japanese Journal of Applied Physics 49 (8S1), 08JD02, 2010 | 54 | 2010 |
| Method of forming a high dielectric constant insulating film and method of producing semiconductor device using the same K Eriguchi US Patent 6,734,069, 2004 | 51 | 2004 |
| Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source Y Takao, N Kusaba, K Eriguchi, K Ono Journal of Applied Physics 108 (9), 2010 | 50 | 2010 |
| Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device … K Eriguchi, T Yamada, M Okuyama US Patent 6,113,733, 2000 | 49 | 2000 |
| Effects of strained layer near SiO2–Si interface on electrical characteristics of ultrathin gate oxides K Eriguchi, Y Harada, M Niwa Journal of Applied Physics 87 (4), 1990-1995, 2000 | 49 | 2000 |
| Model for bias frequency effects on plasma-damaged layer formation in Si substrates K Eriguchi, Y Nakakubo, A Matsuda, Y Takao, K Ono Japanese Journal of Applied Physics 49 (5R), 056203, 2010 | 47 | 2010 |
| Modeling of ion-bombardment damage on Si surfaces for in-line analysis A Matsuda, Y Nakakubo, Y Takao, K Eriguchi, K Ono Thin Solid Films 518 (13), 3481-3486, 2010 | 47 | 2010 |
| Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2 H Fukumoto, I Fujikake, Y Takao, K Eriguchi, K Ono Plasma Sources Science and Technology 18 (4), 045027, 2009 | 47 | 2009 |
| Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2 H Fukumoto, I Fujikake, Y Takao, K Eriguchi, K Ono Plasma Sources Science and Technology 18 (4), 045027, 2009 | 47 | 2009 |
