The SuperCam instrument suite on the Mars 2020 rover: science objectives and mast-unit description S Maurice, RC Wiens, P Bernardi, P Caïs, S Robinson, T Nelson, ...
Space Science Reviews 217, 1-108, 2021
193 2021 Radiation effects in pinned photodiode CMOS image sensors: Pixel performance degradation due to total ionizing dose V Goiffon, M Estribeau, O Marcelot, P Cervantes, P Magnan, M Gaillardin, ...
IEEE Transactions on Nuclear Science 59 (6), 2878-2887, 2012
109 2012 Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology C Virmontois, V Goiffon, P Magnan, S Girard, C Inguimbert, S Petit, ...
IEEE Transactions on Nuclear Science 57 (6), 3101-3108, 2010
82 2010 Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors C Virmontois, V Goiffon, P Magnan, O Saint-Pé, S Girard, S Petit, ...
IEEE Transactions on Nuclear Science 58 (6), 3085-3094, 2011
75 2011 Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements V Goiffon, C Virmontois, P Magnan, S Girard, P Paillet
IEEE Transactions on Nuclear Science 57 (6), 3087-3094, 2010
74 2010 Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors V Goiffon, C Virmontois, P Magnan, P Cervantes, S Place, M Gaillardin, ...
IEEE Transactions on Nuclear Science 59 (4), 918-926, 2012
58 2012 Similarities between proton and neutron induced dark current distribution in CMOS image sensors C Virmontois, V Goiffon, P Magnan, S Girard, O Saint-Pe, S Petit, ...
IEEE Transactions on Nuclear Science 59 (4), 927-936, 2012
54 2012 Dark current random telegraph signals in solid-state image sensors C Virmontois, V Goiffon, MS Robbins, L Tauziède, H Geoffray, M Raine, ...
IEEE Transactions on Nuclear Science 60 (6), 4323-4331, 2013
52 2013 Evidence of a novel source of random telegraph signal in CMOS image sensors V Goiffon, P Magnan, P Martin-Gonthier, C Virmontois, M Gaillardin
IEEE electron device letters 32 (6), 773-775, 2011
51 2011 Radiation-induced dose and single event effects in digital CMOS image sensors C Virmontois, A Toulemont, G Rolland, A Materne, V Lalucaa, V Goiffon, ...
IEEE Transactions on Nuclear Science 61 (6), 3331-3340, 2014
49 2014 Displacement damage effects in pinned photodiode CMOS image sensors C Virmontois, V Goiffon, F Corbiere, P Magnan, S Girard, A Bardoux
IEEE Transactions on Nuclear Science 59 (6), 2872-2877, 2012
43 2012 A rover for the JAXA MMX Mission to Phobos S Ulamec, P Michel, M Grott, U Böttger, HW Hübers, N Murdoch, ...
70th International Astronautical Congress, IAC 2019, IAC-19, 2019
40 2019 Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes V Goiffon, C Virmontois, P Magnan, P Cervantes, F Corbière, M Estribeau, ...
Sensors, Systems, and Next-Generation Satellites XIV 7826, 486-497, 2010
37 2010 Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes V Goiffon, P Cervantes, C Virmontois, F Corbière, P Magnan, M Estribeau
IEEE Transactions on Nuclear Science 58 (6), 3076-3084, 2011
36 2011 In-depth analysis on radiation induced multi-level dark current random telegraph signal in silicon solid state image sensors C Durnez, V Goiffon, C Virmontois, JM Belloir, P Magnan, L Rubaldo
IEEE Transactions on Nuclear Science 64 (1), 19-26, 2016
34 2016 Dose and single-event effects on a color CMOS camera for space exploration C Virmontois, JM Belloir, M Beaumel, A Vriet, N Perrot, C Sellier, J Bezine, ...
IEEE Transactions on Nuclear Science 66 (1), 104-110, 2018
29 2018 Proton and -Rays Irradiation-Induced Dark Current Random Telegraph Signal in a 0.18- CMOS Image Sensor E Martin, T Nuns, C Virmontois, JP David, O Gilard
IEEE Transactions on Nuclear Science 60 (4), 2503-2510, 2013
28 2013 Temperature dependence and dynamic behavior of full well capacity in pinned photodiode CMOS image sensors A Pelamatti, JM Belloir, C Messien, V Goiffon, M Estribeau, P Magnan, ...
IEEE transactions on electron devices 62 (4), 1200-1207, 2015
26 2015 Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors V Goiffon, C Virmontois, P Magnan
2011 International Electron Devices Meeting, 8.4. 1-8.4. 4, 2011
25 2011 Dark count rate modeling in single-photon avalanche diodes A Panglosse, P Martin-Gonthier, O Marcelot, C Virmontois, O Saint-Pé, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (5), 1507-1515, 2020
24 2020