| Mass sensing for the advanced fabrication of nanomechanical resonators G Gruber, C Urgell, A Tavernarakis, A Stavrinadis, S Tepsic, C Magén, ... Nano letters 19 (10), 6987-6992, 2019 | 44 | 2019 |
| Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface G Gruber, J Cottom, R Meszaros, M Koch, G Pobegen, T Aichinger, ... Journal of Applied Physics 123 (16), 2018 | 33 | 2018 |
| Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations J Cottom, G Gruber, G Pobegen, T Aichinger, AL Shluger Journal of Applied Physics 124 (4), 2018 | 22 | 2018 |
| Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling J Cottom, G Gruber, P Hadley, M Koch, G Pobegen, T Aichinger, ... Journal of Applied Physics 119 (18), 2016 | 21 | 2016 |
| Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO2 Interface G Gruber, C Gspan, E Fisslthaler, M Dienstleder, G Pobegen, T Aichinger, ... Advanced Materials Interfaces 5 (12), 1800022, 2018 | 14 | 2018 |
| Interrelation of elasticity and thermal bath in nanotube cantilevers S Tepsic, G Gruber, CB Møller, C Magén, P Belardinelli, ER Hernández, ... Physical Review Letters 126 (17), 175502, 2021 | 10 | 2021 |
| Performance and reliability limiting point defects in SiC power devices G Gruber https://diglib.tugraz.at/download.php?id=5988e7b30147b&location=browse, 2016 | 9 | 2016 |
| Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect … G Gruber, P Hadley, M Koch, T Aichinger Applied Physics Letters 105 (4), 2014 | 7 | 2014 |
| Interface defects in SiC power MOSFETs-An electrically detected magnetic resonance study based on spin dependent recombination G Gruber, P Hadley, M Koch, D Peters, T Aichinger AIP Conference Proceedings 1583 (1), 165-168, 2014 | 7 | 2014 |
| Novel nanotube multiquantum dot devices R Tormo-Queralt, CB Møller, DA Czaplewski, G Gruber, M Cagetti, ... Nano Letters 22 (21), 8541-8549, 2022 | 4 | 2022 |
| Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: a Theoretical Study J Cottom, G Gruber, G Pobegen, T Aichinger, AL Shluger Materials Science Forum 858, 257-260, 2016 | 4 | 2016 |
| Influence of Oxide Processing on the Defects at the SiC-SiO2 Interface Measured by Electrically Detected Magnetic Resonance G Gruber, T Aichinger, G Pobegen, D Peters, M Koch, P Hadley Materials Science Forum 858, 643-646, 2016 | 3 | 2016 |
| An extended EDMR setup for SiC defect characterization G Gruber, M Koch, G Pobegen, M Nelhiebel, P Hadley Materials Science Forum 740, 365-368, 2013 | 2 | 2013 |
| Evidence for an Abrupt Transition between SiO2 and SiC from EELS and Ab Initio Modelling J Cottom, MV Mistry, G Gruber, G Pobegen, T Aichinger, AL Shluger Materials Science Forum 963, 199-203, 2019 | 1 | 2019 |
| High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM E Fisslthaler, G Haberfehlner, C Gspan, G Gruber, W Grogger Microelectronics Reliability 100, 113366, 2019 | | 2019 |
| Electrically detected magnetic resonance study on defects in Si pn‐junctions created by proton implantation G Gruber, S Kirnstoetter, P Hadley, M Koch, T Aichinger, H Schulze, ... physica status solidi (c) 11 (11‐12), 1593-1596, 2014 | | 2014 |
| Investigation of performance limiting point defects at semiconductor-oxide interfaces using electrically detected magnetic resonance G Gruber, M Koch, P Hadley | | 2014 |
Peter HadleyGraz University of TechnologyVerified email at tugraz.at
