| Artificial optic-neural synapse for colored and color-mixed pattern recognition S Seo, SH Jo, S Kim, J Shim, S Oh, JH Kim, K Heo, JW Choi, C Choi, S Oh, ... Nature Communications 9 (1), 5106, 2018 | 515 | 2018 |
| High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ... IEEE Electron Device Letters 31 (4), 275-277, 2010 | 240 | 2010 |
| High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment J Shim, A Oh, DH Kang, S Oh, SK Jang, J Jeon, MH Jeon, M Kim, C Choi, ... Advanced Materials 28 (32), 6985-6992, 2016 | 231 | 2016 |
| A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique SH Jo, DH Kang, J Shim, J Jeon, MH Jeon, G Yoo, J Kim, J Lee, GY Yeom, ... Advanced Materials 28 (24), 4824-4831, 2016 | 162 | 2016 |
| The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode CS Kang, HJ Cho, R Choi, YH Kim, CY Kang, SJ Rhee, C Choi, MS Akbar, ... IEEE transactions on electron devices 51 (2), 220-227, 2004 | 138 | 2004 |
| Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate … T Ando, MM Frank, K Choi, C Choi, J Bruley, M Hopstaken, M Copel, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 122 | 2009 |
| Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors B Ku, Y Abbas, AS Sokolov, C Choi Journal of Alloys and Compounds 735, 1181-1188, 2018 | 102 | 2018 |
| The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing H Abbas, Y Abbas, G Hassan, AS Sokolov, YR Jeon, B Ku, CJ Kang, ... Nanoscale 12 (26), 14120-14134, 2020 | 101 | 2020 |
| Compliance-free, digital SET and analog RESET synaptic characteristics of sub-tantalum oxide based neuromorphic device Y Abbas, YR Jeon, AS Sokolov, S Kim, B Ku, C Choi Scientific reports 8 (1), 1228, 2018 | 101 | 2018 |
| Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure AS Sokolov, YR Jeon, S Kim, B Ku, D Lim, H Han, MG Chae, J Lee, ... Applied Surface Science 434, 822-830, 2018 | 98 | 2018 |
| Metal gate-HfO/sub 2/MOS structures on GaAs substrate with and without Si interlayer I Ok, H Kim, M Zhang, CY Kang, SJ Rhee, C Choi, SA Krishnan, T Lee, ... IEEE electron device letters 27 (3), 145-147, 2006 | 98 | 2006 |
| Silver‐adapted diffusive memristor based on organic nitrogen‐doped graphene oxide quantum dots (N‐GOQDs) for artificial biosynapse applications AS Sokolov, M Ali, R Riaz, Y Abbas, MJ Ko, C Choi Advanced Functional Materials 29 (18), 1807504, 2019 | 97 | 2019 |
| Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode CH Choi, TS Jeon, R Clark, DL Kwong IEEE Electron Device Letters 24 (4), 215-217, 2003 | 95 | 2003 |
| Highly sensitive and full range detectable humidity sensor using PEDOT: PSS, methyl red and graphene oxide materials G Hassan, M Sajid, C Choi Scientific reports 9 (1), 15227, 2019 | 90 | 2019 |
| High-k dielectrics and MOSFET characteristics JC Lee, HJ Cho, CS Kang, S Rhee, YH Kim, R Choi, CY Kang, C Choi, ... IEEE International Electron Devices Meeting 2003, 4.4. 1-4.4. 4, 2003 | 90 | 2003 |
| Ultrathin HfO2 (equivalent oxide thickness= 1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation HS Kim, I Ok, M Zhang, C Choi, T Lee, F Zhu, G Thareja, L Yu, JC Lee Applied physics letters 88 (25), 2006 | 73 | 2006 |
| SnO2 encapsulated TiO2 hollow nanofibers as anode material for lithium ion batteries H Park, T Song, H Han, A Devadoss, J Yuh, C Choi, U Paik Electrochemistry communications 22, 81-84, 2012 | 70 | 2012 |
| Thermally stable CVD HfO/sub x/N/sub y/advanced gate dielectrics with poly-Si gate electrode CH Choi, SJ Rhee, TS Jeon, N Lu, JH Sim, R Clark, M Niwa, DL Kwong Digest. International Electron Devices Meeting,, 857-860, 2002 | 69 | 2002 |
| Tech. Dig.-Int. Electron Devices Meet. CH Choi, SJ Rhee, TS Jeon, N Lu, JH Sim, R Clark, M Niwa, DL Kwong Tech. Dig. Int. Electron Devices Meet 857, 2002 | 67 | 2002 |
| Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems M Ismail, H Abbas, C Choi, S Kim Applied Surface Science 529, 147107, 2020 | 64 | 2020 |
Yu-Rim JeonHanyang Univ. studentVerified email at hanyang.ac.kr
