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Brian Grummel, PhD
Brian Grummel, PhD
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Year
Thermo-mechanical characterization of Au-In transient liquid phase bonding die-attach
BJ Grummel, ZJ Shen, HA Mustain, AR Hefner
IEEE Transactions on components, packaging and manufacturing technology 3 (5 …, 2013
422013
Design consideration of high temperature SiC power modules
B Grummel, R McClure, L Zhou, AP Gordon, L Chow, ZJ Shen
2008 34th Annual Conference of IEEE Industrial Electronics, 2861-2866, 2008
352008
10 kV SiC BJTs—Static, switching and reliability characteristics
S Sundaresan, S Jeliazkov, B Grummel, R Singh
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
292013
Short circuit robustness of 1200 V SiC switches
R Singh, B Grummel, S Sundaresan
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
172015
Rapidly maturing SiC junction transistors featuring current gain (β)> 130, blocking voltages up to 2700 V and stable long-term operation
SG Sundaresan, S Jeliazkov, B Grummel, R Singh
Materials Science Forum 778, 1001-1004, 2014
162014
Reliability study of Au-In transient liquid phase bonding for SiC power semiconductor packaging
B Grummel, HA Mustain, ZJ Shen, AR Hefner
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
162011
High temperature high power module design for wide bandgap semiconductors: Packaging architecture and materials considerations
ZJ Shen, B Grummel, R McClure, A Gordon, A Hefner
Proc. IMAPS HiTEC, 170-176, 2008
102008
Static and switching characteristics of 1200 V SiC Junction Transistors with on-chip integrated Schottky rectifiers
S Sundaresan, S Jeliazkov, H Issa, B Grummel, R Singh
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
92014
Reliability Characterization of Au–In Transient Liquid Phase Bonding Through Electrical Resistivity Measurement
BJ Grummel, HA Mustain, ZJ Shen, JC Elmes, AR Hefner
IEEE Transactions on Components, Packaging and Manufacturing Technology 5 …, 2015
72015
Switching and robustness analysis of 10 kV SiC BJTs
R Singh, S Jeliazkov, B Grummel, S Sundaresan
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
52015
Comparison of energy losses in high-current 1700 V switches
S Sundaresan, B Grummel, R Singh
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
52015
Silicon carbide high-temperature packaging module fabrication
W Brokaw, J Elmes, B Grummel, ZJ Shen, TX Wu
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 178-181, 2013
52013
Current Gain Stability of SiC Junction Transistors subjected to long-duration DC and Pulsed Current Stress
SG Sundaresan, B Grummel, R Singh
Materials Science Forum 858, 929-932, 2016
42016
Improvement of the current gain stability of SiC junction transistors
SG Sundaresan, B Grummel, D Hamilton, R Singh
Materials Science Forum 821, 822-825, 2015
42015
Design and characterization of high temperature packaging for wide-bandgap semiconductor devices
B Grummel
42012
Comparison of Au-In transient liquid phase bonding designs for SiC power semiconductor device packaging
B Grummel, HA Mustain, ZJ Shen, AR Hefner
Additional Papers and Presentations 2011 (HITEN), 000077-000083, 2011
22011
High Temperature, High Power Module Design for Wide Bandgap Semiconductors: Packaging Architecture and Materials Considerations
AR Hefner Jr, ZJ Shen, R McClure, A Gordon, B Grummel
Allen R. Hefner Jr., ZJ Shen, Ryan McClure, Ali Gordon, Brian Grummel, 2008
22008
High temperature packaging for wide bandgap semiconductor devices
B Grummel
22008
Short circuit robustness of 1200 v SiC junction transistors and power MOSFETs
SG Sundaresan, B Grummel, R Singh
Materials Science Forum 858, 807-811, 2016
12016
Phase Leg Power Module with SiC MIDSJT Devices.
S Atcitty, S Sundaresan, S Jeliazkov, H Issa, B Grummel, R Singh
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2014
2014
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