Follow
Nilushi Wijeyasinghe
Nilushi Wijeyasinghe
Imperial College London, PhD in Physics
Verified email at imperial.ac.uk
Title
Cited by
Cited by
Year
Copper (I) thiocyanate (CuSCN) hole‐transport layers processed from aqueous precursor solutions and their application in thin‐film transistors and highly efficient organic and …
N Wijeyasinghe, A Regoutz, F Eisner, T Du, L Tsetseris, YH Lin, H Faber, ...
Advanced Functional Materials 27 (35), 1701818, 2017
2392017
Copper (I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics
N Wijeyasinghe, TD Anthopoulos
Semiconductor Science and Technology 30 (10), 104002, 2015
1032015
p‐Doping of copper (I) thiocyanate (CuSCN) hole‐transport layers for high‐performance transistors and organic solar cells
N Wijeyasinghe, F Eisner, L Tsetseris, YH Lin, A Seitkhan, J Li, F Yan, ...
Advanced Functional Materials 28 (31), 1802055, 2018
692018
Indolo-naphthyridine-6, 13-dione thiophene building block for conjugated polymer electronics: molecular origin of ultrahigh n-type mobility
KJ Fallon, N Wijeyasinghe, EF Manley, SD Dimitrov, SA Yousaf, ...
Chemistry of Materials 28 (22), 8366-8378, 2016
662016
A nature-inspired conjugated polymer for high performance transistors and solar cells
KJ Fallon, N Wijeyasinghe, N Yaacobi-Gross, RS Ashraf, DME Freeman, ...
Macromolecules 48 (15), 5148-5154, 2015
602015
Copper (I) selenocyanate (CuSeCN) as a novel hole‐transport layer for transistors, organic solar cells, and light‐emitting diodes
N Wijeyasinghe, L Tsetseris, A Regoutz, WY Sit, Z Fei, T Du, X Wang, ...
Advanced Functional Materials 28 (14), 1707319, 2018
272018
Effect of alkyl chain branching point on 3D crystallinity in high n‐type mobility indolonaphthyridine polymers
KJ Fallon, A Santala, N Wijeyasinghe, EF Manley, N Goodeal, A Leventis, ...
Advanced Functional Materials 27 (43), 1704069, 2017
192017
Du T.; Tsetseris L.; Lin Y.-H
N Wijeyasinghe, A Regoutz, F Eisner
Faber H, 0
7
Tyrian purple: An ancient natural dye for cross-conjugated n-type charge transport
KJ Fallon, N Wijeyasinghe, A Leventis, JM Marin-Beloqui, DTW Toolan, ...
Journal of Materials Chemistry C 9 (12), 4200-4205, 2021
42021
Radiofrequency Schottky Diodes Based on p-Doped Copper (I) Thiocyanate (CuSCN)
DG Georgiadou, N Wijeyasinghe, O Solomeshch, N Tessler, ...
ACS Applied Materials & Interfaces 14 (26), 29993-29999, 2022
32022
TOPICAL REVIEW Copper (I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics
N Wijeyasinghe, TD Anthopoulos
Semiconductor Science and Technology 30, 0
1
Radiofrequency Schottky Diodes Based on p-Doped Copper (I) Thiocyanate (CuSCN)
N Wijeyasinghe, O Solomeshch, N Tessler, DG Georgiadou, ...
ACS APPLIED MATERIALS & INTERFACES, 2022
2022
Copper pseudohalides as solution-processable hole-transport materials for opto/electronic applications (Physics PhD thesis)
N Wijeyasinghe
Imperial College London, 2018
2018
Indolo-naphthyridine-6, 13-dione thiophene (INDT) Building Block for Conjugated Polymer Electronics
KJ Fallon, N Wijeyasinghe, EF Manley, I McCulloch, T Marks, LX Chen, ...
The system can't perform the operation now. Try again later.
Articles 1–14