| Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells Y Kim, KY Ban, CB Honsberg Applied Physics Letters 106 (22), 2015 | 38 | 2015 |
| Broadband antireflective coatings for high efficiency InGaP/GaAs/InGaAsP/InGaAs multi-junction solar cells G Oh, Y Kim, SJ Lee, EK Kim Solar Energy Materials and Solar Cells 207, 110359, 2020 | 31 | 2020 |
| Submonolayer quantum dots for optoelectronic devices Y Kim, JO Kim, SJ Lee, SK Noh Journal of the Korean Physical Society 73, 833-840, 2018 | 27 | 2018 |
| Fabry-Perot cavity resonance enabling highly polarization-sensitive double-layer gold grating J Hwang, B Oh, Y Kim, S Silva, JO Kim, DA Czaplewski, JE Ryu, EK Kim, ... Scientific Reports 8 (1), 14787, 2018 | 26 | 2018 |
| Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure TD Nguyen, JO Kim, YH Kim, ET Kim, QL Nguyen, SJ Lee AIP Advances 8 (2), 2018 | 26 | 2018 |
| Dual-band unipolar barrier infrared photodetector based on InGaAsSb bulk and type-II InAs/GaSb superlattice absorbers VM More, Y Kim, J Jeon, JC Shin, SJ Lee Journal of Alloys and Compounds 868, 159195, 2021 | 21 | 2021 |
| Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells Y Kim, IW Cho, MY Ryu, JO Kim, SJ Lee, KY Ban, CB Honsberg Applied Physics Letters 111 (7), 2017 | 21 | 2017 |
| Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy C Zhang, Y Kim, NN Faleev, CB Honsberg Journal of Crystal Growth 475, 83-87, 2017 | 19 | 2017 |
| Monolithic two-color short-wavelength InGaAs infrared photodetectors using InAsP metamorphic buffers S Park, J Jeon, VM More, RS Lee, Y Seo, M Kim, PD Nguyen, M Kim, ... Applied Surface Science 581, 152421, 2022 | 16 | 2022 |
| Analysis of the Current-voltage Curves of a Cu(In,Ga)Se2 Thin-film Solar Cell Measured at Different Irradiation Conditions KS Lee, YD Chung, NM Park, DH Cho, KH Kim, JH Kim, SJ Kim, YH Kim, ... Journal of the Optical Society of Korea 14 (4), 321-325, 2010 | 15 | 2010 |
| Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells Y Kim, KY Ban, C Zhang, CB Honsberg Applied Physics Letters 107 (15), 2015 | 13 | 2015 |
| Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots Y Kim, KY Ban, A Boley, DJ Smith, CB Honsberg Applied Physics Letters 107 (17), 2015 | 11 | 2015 |
| Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer Y Kim, KY Ban, C Zhang, JO Kim, SJ Lee, CB Honsberg Applied Physics Letters 108 (10), 2016 | 9 | 2016 |
| Material and device characterization of InGaP solar cells grown on GaAs misoriented substrates by metal-organic chemical vapor deposition S Park, TT Nguyen, LQ Nguyen, Y Kim, SJ Lee Solar Energy 220, 406-411, 2021 | 7 | 2021 |
| Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs1-xSbx/GaAs composite substrates D Tang, Y Kim, N Faleev, CB Honsberg, DJ Smith Journal of Applied Physics 118 (9), 2015 | 6 | 2015 |
| Improving infra-red polarized imaging efficiency in a bilayer wire-grid polarizer J Jeon, BS Chun, Y Seo, M Kim, H Kim, Y Kim, JS Kim, SJ Lee Nanoscale Advances 5 (3), 633-639, 2023 | 5 | 2023 |
| Plasmonic-layered InAs/InGaAs quantum-dots-in-a-well pixel detector for spectral-shaping and photocurrent enhancement J Hwang, Z Ku, J Jeon, Y Kim, JO Kim, DK Kim, A Urbas, EK Kim, SJ Lee Nanomaterials 10 (9), 1827, 2020 | 5 | 2020 |
| Investigation of the incident light intensity effect on the internal electric fields of GaAs single junction solar cell using bright electroreflectance spectroscopy S SaeidNahaie, SR Entezar, H Naghshara, HJ Jo, JS Kim, Y Kim, SJ Lee Current Applied Physics 20 (1), 145-149, 2020 | 5 | 2020 |
| Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots Y Kim, KY Ban, D Kuciauskas, PC Dippo, CB Honsberg Journal of crystal growth 406, 68-71, 2014 | 5 | 2014 |
| Dual-wavelength InGaAsSb/AlGaAsSb quantum-well light-emitting diodes TD Nguyen, J Hwang, Y Kim, ET Kim, JO Kim, SJ Lee Journal of the Korean Physical Society 72, 1249-1253, 2018 | 4 | 2018 |
Suho ParkUniversity of DelawareVerified email at udel.edu
