| Handbook on physical properties of Ge, Si, GaAs and InP A Dargys, J Kundrotas Vilnius: Science and Encyclopedia Publishers, 1994., 1994 | 446 | 1994 |
| Excitonic and impurity-related optical transitions in Be -doped multiple quantum wells: Fractional-dimensional space approach J Kundrotas, A Čerškus, S Ašmontas, G Valušis, B Sherliker, MP Halsall, ... Physical Review B 72 (23), 235322, 2005 | 48 | 2005 |
| Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach J Kundrotas, A Čerškus, S Ašmontas, G Valušis, MP Halsall, ... Semiconductor science and technology 22 (9), 1070, 2007 | 35 | 2007 |
| Microwave sensor based on modulation-doped GaAs/AlGaAs structure A Juozapavičius, L Ardaravičius, A Sužiedelis, A Kozič, J Gradauskas, ... Semiconductor science and technology 19 (4), S436, 2004 | 32 | 2004 |
| Impact ionization of excitons by hot carriers in quantum wells A Dargys, J Kundrotas Semiconductor science and technology 13 (11), 1258, 1998 | 20 | 1998 |
| Radiative recombination spectra of p-type δ-doped GaAs∕ AlAs multiple quantum wells near the Mott transition J Kundrotas, A Čerškus, G Valušis, M Lachab, SP Khanna, P Harrison, ... Journal of Applied Physics 103 (12), 2008 | 19 | 2008 |
| Electron tunneling from an ultrathin quantum well in constant and alternating electric fields J Kundrotas, A Dargys physica status solidi (b) 134 (1), 267-274, 1986 | 19 | 1986 |
| Impurity-related photoluminescence line shape asymmetry in GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach J Kundrotas, A Čerškus, G Valušis, A Johannessen, E Johannessen, ... Journal of Applied Physics 107 (9), 2010 | 17 | 2010 |
| Electrical properties of narrow gap semiconductor PtSb2 A Dargys, J Kundrotas Journal of Physics and Chemistry of Solids 44 (3), 261-267, 1983 | 16 | 1983 |
| Shallow impurity impact ionization transients in n-type InP and GaAs A Dargys, A Cesna, J Kundrotas Semiconductor science and technology 7 (2), 210, 1992 | 14 | 1992 |
| Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1− xAs heterostructures J Kundrotas, A Čerškus, V Nargelienė, A Sužiedėlis, S Ašmontas, ... Journal of Applied Physics 108 (6), 2010 | 12 | 2010 |
| Shallow donor impact ionization in n-InP and n-GaAs: influence of doping and compensation J Kundrotas, A Dargys, A Cesna Semiconductor science and technology 11 (5), 692, 1996 | 12 | 1996 |
| Photoluminescence transients due to donor and exciton avalanche breakdown A Čésna, J Kundrotas, A Dargys Journal of luminescence 78 (2), 157-166, 1998 | 11 | 1998 |
| Impact ionization of donors and acceptors in semiconductors A Dargys, J Kundrotas Lietuvos Fizikos Zurnalas 34 (5), 395-421, 1994 | 10 | 1994 |
| Photoluminescence characterisation of GaAs/AlGaAs structures designed for microwave and terahertz detectors A Čerškus, J Kundrotas, V Nargelienė, A Sužiedėlis, S Ašmontas, ... Lithuanian Journal of Physics 51 (4), 2011 | 9 | 2011 |
| Semiconductor nanostructures for infrared applications N Zurauskiene, S Asmontas, A Dargys, J Kundrotas, G Janssen, ... Diffusion and Defect Data. Part B, Solid State Phenomena 99, 99-108, 2004 | 9 | 2004 |
| Light emission lifetimes in p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition J Kundrotas, A Čerškus, G Valušis, LH Li, EH Linfield, A Johannessen, ... Journal of Applied Physics 112 (4), 2012 | 8 | 2012 |
| MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection M Lachab, SP Khanna, P Harrison, EH Linfield, A Čerškus, J Kundrotas, ... Journal of crystal growth 312 (10), 1761-1765, 2010 | 8 | 2010 |
| Influence of composition in GaAs/AlGaAs heterojunctions on microwave detection S Ašmontas, J Gradauskas, J Kundrotas, A Sužiedėlis, A Šilėnas, ... Materials Science Forum 297, 319-322, 1998 | 8 | 1998 |
| Fabrication influence on the surface morphology and structure of vapour etched porous silicon S Mockevičienė, D Adlienė, I Prosyčevas, J Kundrotas, A Čerškus, ... Lithuanian Journal of Physics 51 (3), 2011 | 7 | 2011 |
