| Selective deposition of aluminum and nitrogen containing material H Wang, Q Xie, D Longrie, JW Maes, D De Roest, J Hsieh, C Zhu, ... US Patent 10,566,185, 2020 | 432 | 2020 |
| NbMC layers C Zhu, T Asikainen, RB Milligan US Patent 10,211,308, 2019 | 366 | 2019 |
| Deposition of metal borides C Zhu, K Shrestha, S Haukka US Patent 10,190,213, 2019 | 366 | 2019 |
| Selective film deposition method to form air gaps C Zhu US Patent 9,859,151, 2018 | 360 | 2018 |
| Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures T Blomberg, C Zhu US Patent 10,529,563, 2020 | 337 | 2020 |
| Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures B Zope, K Shrestha, S Swaminathan, C Zhu, HTA Jussila, Q Xie US Patent 11,295,980, 2022 | 326 | 2022 |
| Method for forming a semiconductor device structure comprising a gate fill metal Q Xie, C Zhu, K Shrestha, P Calka, O Madia, JW Maes, ME Givens US Patent 10,607,895, 2020 | 324 | 2020 |
| Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures B Zope, S Swaminathan, K Shrestha, C Zhu, HTA Jussila, Q Xie US Patent App. 16/105,745, 2019 | 322 | 2019 |
| Methods for forming a semiconductor device structure and related semiconductor device structures C Zhu, K Shrestha, P Raisanen, ME Givens US Patent 10,734,497, 2020 | 312 | 2020 |
| Layer forming method C Zhu, K Shrestha, Q Xie US Patent 11,056,344, 2021 | 311 | 2021 |
| Layer forming method C Zhu, K Shrestha, Q Xie, B Zope US Patent App. 16/117,530, 2019 | 311 | 2019 |
| Methods for filling a gap feature on a substrate surface and related semiconductor device structures K Shrestha, B Zope, S Swaminathan, C Zhu, HTA Jussila, Q Xie US Patent App. 16/105,761, 2019 | 311 | 2019 |
| NbMC layers C Zhu, T Asikainen, RB Milligan US Patent 11,233,133, 2022 | 310 | 2022 |
| Reactor, system including the reactor, and methods of manufacturing and using same T Blomberg, V Sharma, C Zhu US Patent 11,114,283, 2021 | 304 | 2021 |
| Selective deposition method to form air gaps C Zhu US Patent 11,094,582, 2021 | 257 | 2021 |
| Methods for forming a semiconductor device structure and related semiconductor device structures C Zhu, K Shrestha, P Raisanen, ME Givens US Patent 11,164,955, 2021 | 238 | 2021 |
| Method for forming a semiconductor device structure and related semiconductor device structures Q Xie, C Zhu, K Shrestha, P Calka, O Madia, JW Maes, ME Givens US Patent App. 16/834,657, 2020 | 234 | 2020 |
| Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures B Zope, K Shrestha, S Swaminathan, C Zhu, HTA Jussila, Q Xie US Patent 11,581,220, 2023 | 203 | 2023 |
| Deposition method C Zhu, H Jussila, Q Xie US Patent 11,393,690, 2022 | 177 | 2022 |
| Layer forming method C Zhu, K Shrestha, Q Xie US Patent App. 17/350,281, 2021 | 177 | 2021 |
