Follow
Rowtu Srinu
Title
Cited by
Cited by
Year
The role of work function and band gap in resistive switching behaviour of ZnTe thin films
S Rowtu, LDV Sangani, MG Krishna
Journal of Electronic Materials 47, 1620-1629, 2018
92018
Radio frequency power controlled Gd2O3 crystal phase transition from monoclinic to cubic
A Rawat, KK Roluahpuia, S Rowtu, V Belwanshi, A Laha, S Mahapatra, ...
Thin Solid Films 742, 139047, 2022
52022
FeFET-based MirrorBit cell for High-density NVM storage
P Meihar, R Srinu, V Saraswat, S Lashkare, H Mulaosmanovic, AK Singh, ...
IEEE Transactions on Electron Devices, 2024
12024
Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications
P Meihar, R Srinu, S Lashkare, AK Singh, H Mulaosmanovic, ...
IEEE Transactions on Electron Devices, 2024
2024
Design Space for the Scaled Ferroelectric MirrorBit Technology for High-Density NVM Storage
P Meihar, S Rowtu, H Mulaosmanovic, S Dünkel, S Beyer, U Ganguly
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2 70 C/cm) in HfZrO Thin Films
S Rowtu, P Meihar, A Pandey, MH Ali, S Lashkare, U Ganguly
IEEE Transactions on Electron Devices, 2023
2023
Integration of Non-Filamentary Pr0.7Ca0.3MnO3 – based Memristor with Silicon-PN Junction
J Sakhuja, S Rowtu, S Patil, S Lashkare, U Ganguly
IEEE Electron Device Letters, 2023
2023
A Ferroelectric Differential Bit Cell Based Multiple-Time Programmable Physical Unclonable Function (PUF) For IoT Devices Security
P Meihar, S Rowtu, S Lashkare, U Ganguly
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
2023
The system can't perform the operation now. Try again later.
Articles 1–8