| System and method for gas-phase sulfur passivation of a semiconductor surface F Tang, ME Givens, Q Xie, P Raisanen US Patent 9,558,931, 2017 | 461 | 2017 |
| Semiconductor structure and device and methods of forming same using selective epitaxial process Q Xie, V Machkaoutsan, JW Maes US Patent 9,240,412, 2016 | 435 | 2016 |
| Selective deposition of aluminum and nitrogen containing material H Wang, Q Xie, D Longrie, JW Maes, D De Roest, J Hsieh, C Zhu, ... US Patent 10,566,185, 2020 | 429 | 2020 |
| Method for forming metal chalcogenide thin films on a semiconductor device F Tang, ME Givens, JH Woodruff, Q Xie, JW Maes US Patent 9,711,396, 2017 | 379 | 2017 |
| Semiconductor structure and device formed using selective epitaxial process Q Xie, V Machkaoutsan, JW Maes US Patent 10,361,201, 2019 | 378 | 2019 |
| System and method for gas-phase passivation of a semiconductor surface F Tang, ME Givens, Q Xie, P Raisanen US Patent 9,905,492, 2018 | 377 | 2018 |
| Sulfur-containing thin films SP Haukka, F Tang, M Givens, JW Maes, Q Xie US Patent 9,245,742, 2016 | 375 | 2016 |
| System and method for gas-phase passivation of a semiconductor surface F Tang, ME Givens, Q Xie, X Jiang, P Raisanen, P Calka US Patent 9,911,676, 2018 | 374 | 2018 |
| Sulfur-containing thin films SP Haukka, F Tang, M Givens, JW Maes, Q Xie US Patent 9,478,419, 2016 | 374 | 2016 |
| Methods for forming a semiconductor device and related semiconductor device structures Q Xie, ME Givens, P Raisanen, JW Maes US Patent 10,643,904, 2020 | 373 | 2020 |
| Methods for semiconductor passivation by nitridation Q Xie, F Tang, M Givens, P Raisanen, JW Maes US Patent 9,711,350, 2017 | 368 | 2017 |
| Process for depositing electrode with high effective work function V Machkaoutsan, JW Maes, Q Xie US Patent 9,136,180, 2015 | 368 | 2015 |
| Method for passivating a surface of a semiconductor and related systems X Jiang, F Tang, Q Xie, P Calka, SH Jung, ME Givens US Patent 10,410,943, 2019 | 364 | 2019 |
| Source/drain performance through conformal solid state doping Q Xie, D De Roest, J Woodruff, ME Givens, JW Maes, T Blanquart US Patent 10,032,628, 2018 | 364 | 2018 |
| Implementing atomic layer deposition for gate dielectrics F Tang, X Jiang, Q Xie, ME Givens, JW Maes, J Chen US Patent App. 15/286,503, 2017 | 364 | 2017 |
| Deposition of charge trapping layers P Calka, Q Xie, D Pierreux, B Jongbloed US Patent 11,532,757, 2022 | 363 | 2022 |
| Method of forming a germanium oxynitride film F Tang, Q Xie, JW Maes, X Jiang, ME Givens US Patent 10,367,080, 2019 | 362 | 2019 |
| Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures B Zope, K Shrestha, S Swaminathan, C Zhu, HTA Jussila, Q Xie US Patent 11,295,980, 2022 | 326 | 2022 |
| Method for forming a semiconductor device structure comprising a gate fill metal Q Xie, C Zhu, K Shrestha, P Calka, O Madia, JW Maes, ME Givens US Patent 10,607,895, 2020 | 324 | 2020 |
| Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures B Zope, S Swaminathan, K Shrestha, C Zhu, HTA Jussila, Q Xie US Patent App. 16/105,745, 2019 | 322 | 2019 |
Michael E. Givens, Ph.D.Senior Director & Executive Technologist, ASM Corporate R&D, Leuven, BelgiumVerified email at asm.com
