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Wanda Wosik
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Parallel and orthogonal E-field alignment of single-walled carbon nanotubes by ac dielectrophoresis
D Padmaraj, W Zagozdzon-Wosik, LM Xie, VG Hadjiev, P Cherukuri, ...
Nanotechnology 20 (3), 035201, 2008
452008
Fabrication of submicron junctions-proximity rapid thermal diffusion of phosphorus, boron, and arsenic
W Zagozdzon-Wosik, PB Grabiec, G Lux
IEEE transactions on electron devices 41 (12), 2281-2290, 1994
441994
Silicon doping from phosphorus spin‐on dopant sources in proximity rapid thermal diffusion
W Zagozdzon‐Wosik, PB Grabiec, G Lux
Journal of applied physics 75 (1), 337-344, 1994
361994
Fabrication of short and thin silicon cantilevers for AFM with SOI wafers
Q Yu, G Qin, C Darne, C Cai, W Wosik, SS Pei
Sensors and Actuators A: Physical 126 (2), 369-374, 2006
272006
Mitochondrial membrane studies using impedance spectroscopy with parallel pH monitoring
D Padmaraj, R Pande, JH Miller Jr, J Wosik, W Zagozdzon-Wosik
PLoS One 9 (7), e101793, 2014
262014
Reduction of electrode polarization capacitance in low-frequency impedance spectroscopy by using mesh electrodes
D Padmaraj, JH Miller Jr, J Wosik, W Zagozdzon-Wosik
Biosensors and Bioelectronics 29 (1), 13-17, 2011
252011
Applications of metallic borides for gate electrodes in CMOS integrated circuits
W Zagozdzon-Wosik, C Darne, D Radhakrishnan, I Rusakova, ...
Rev. Adv. Mater. Sci 8, 185-194, 2004
242004
Novel silicon titanium diboride micropatterned substrates for cellular patterning
J Friguglietti, S Das, P Le, D Fraga, M Quintela, SA Gazze, D McPhail, ...
Biomaterials 244, 119927, 2020
222020
Formation of contacts and integration with shallow junctions using diborides of Ti, Zr and Hf
R Ranjit, W Zagozdzon-Wosik, I Rusakova, P Van Der Heide, ZH Zhang, ...
Rev. Adv. Mater. Sci 8 (2), 176-184, 2004
212004
Kinetics of phosphorus proximity rapid thermal diffusion using spin‐on dopant source for shallow junctions fabrication
PB Grabiec, W Zagozdzon‐Wosik, G Lux
Journal of applied physics 78 (1), 204-211, 1995
211995
Doping of trench capacitors by rapid thermal diffusion
W Zagozdzon-Wosik, JC Wolfe, CW Teng
IEEE electron device letters 12 (6), 264-266, 1991
191991
Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing
JC Wolfe, W Zagozdzon-Wosik
US Patent 5,550,082, 1996
181996
Defect generation and gettering during rapid thermal annealing
W Zagozdzon‐Wosik
Journal of the Electrochemical Society 135 (8), 2065, 1988
181988
Heavy doping parameters estimated from transistor measurements
W Kuzmicz, W Zagozdzon-Wosik
Solid-state electronics 31 (5), 911-919, 1988
131988
Semifluorinated alkylphosphonic acids form high-Quality self-Assembled monolayers on Ag-coated yttrium barium copper oxide tapes and enable filamentization of the tapes by …
CS Park, HJ Lee, D Lee, AC Jamison, E Galstyan, W Zagozdzon-Wosik, ...
Langmuir 32 (34), 8623-8630, 2016
72016
Boron doping using proximity rapid thermal diffusion from spin-on-dopants
M Rastogi, W Zagozdzon-Wosik, F Romero-Borja, JM Heddleson, ...
MRS Online Proceedings Library (OPL) 342, 369, 1994
71994
Microwave properties of single-walled carbon nanotubes films below percolation threshold
C Darne, L Xie, W Zagozdzon-Wosik, HK Schmidt, J Wosik
Applied Physics Letters 94 (23), 2009
62009
Microstructure and electrical properties of diborides modified by rapid thermal annealing
W ZAGOZDZON‐WOSIK, I Rusakova, C Darne, ZH ZHANG, ...
Journal of microscopy 223 (3), 227-230, 2006
62006
Physical mechanisms of bandgap-narrowing in silicon
W Zagoźdźon-Wosik, W Kuźmicz
Electronics Letters 19 (14), 515-516, 1983
61983
Recent advances in understanding of the minority carrier transport in heavily doped silicon
W Kuzmicz, W Zagozdzon-Wosik
Physics of Semiconductor Devices, Proceedings of II International Workshop, 1983
61983
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Articles 1–20