Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111) E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ... Crystal Growth & Design 11 (9), 4001-4008, 2011 | 117 | 2011 |
Incorporation of the dopants Si and Be into GaAs nanowires M Hilse, M Ramsteiner, S Breuer, L Geelhaar, H Riechert Applied Physics Letters 96 (19), 2010 | 104 | 2010 |
Vapor-liquid-solid nucleation of GaAs on Si (111): Growth evolution from traces to nanowires S Breuer, M Hilse, A Trampert, L Geelhaar, H Riechert Physical Review B 82 (7), 075406, 2010 | 53 | 2010 |
Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy M Hilse, Y Takagaki, J Herfort, M Ramsteiner, C Herrmann, S Breuer, ... Applied Physics Letters 95 (13), 2009 | 49 | 2009 |
Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator T Liu, J Kally, T Pillsbury, C Liu, H Chang, J Ding, Y Cheng, M Hilse, ... Physical review letters 125 (1), 017204, 2020 | 34 | 2020 |
Substrate modification during chemical vapor deposition of hBN on sapphire A Bansal, M Hilse, B Huet, K Wang, A Kozhakhmetov, JH Kim, S Bachu, ... ACS Applied Materials & Interfaces 13 (45), 54516-54526, 2021 | 21 | 2021 |
Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy JCMH Kuanchen Xiong, Maria Hilse, Lei Li, Alexander Göritz, Marco Lisker ... IEEE Transactions on Electron Devices 67 (3), 796 - 801, 2020 | 20 | 2020 |
GaAs–Fe3Si Core–Shell Nanowires: Nanobar Magnets M Hilse, J Herfort, B Jenichen, A Trampert, M Hanke, P Schaaf, ... Nano letters 13 (12), 6203-6209, 2013 | 16 | 2013 |
Strain in GaAs–MnAs core–shell nanowires grown by molecular beam epitaxy M Hilse, Y Takagaki, M Ramsteiner, J Herfort, S Breuer, L Geelhaar, ... Journal of crystal growth 323 (1), 307-310, 2011 | 16 | 2011 |
Nucleation and growth of Au-assisted GaAs nanowires on GaAs (1 1 1) B and Si (1 1 1) in comparison S Breuer, M Hilse, L Geelhaar, H Riechert Journal of crystal growth 323 (1), 311-314, 2011 | 15 | 2011 |
Growth of ultrathin Pt layers and selenization into PtSe2 by molecular beam epitaxy M Hilse, K Wang, R Engel-Herbert 2D Materials 7 (4), 045013, 2020 | 10 | 2020 |
Sticking coefficients of selenium and tellurium DSH Liu, M Hilse, R Engel-Herbert Journal of Vacuum Science & Technology A 39 (2), 2021 | 9 | 2021 |
Facetted growth of Fe3Si shells around GaAs nanowires on Si (111) B Jenichen, M Hilse, J Herfort, A Trampert Journal of Crystal Growth 427, 21-23, 2015 | 9 | 2015 |
Real structure of lattice matched GaAs–Fe3Si core–shell nanowires B Jenichen, M Hilse, J Herfort, A Trampert Journal of Crystal Growth 410, 1-6, 2015 | 9 | 2015 |
Swingback in magnetization reversal in MnAs–GaAs coaxial nanowire heterostructures Y Takagaki, J Herfort, M Hilse, L Geelhaar, H Riechert Journal of Physics: Condensed Matter 23 (12), 126002, 2011 | 7 | 2011 |
Spectroscopic ellipsometry as an in-situ monitoring tool for Bi2Se3 films grown by molecular beam epitaxy M Hilse, X Wang, P Killea, F Peiris, R Engel-Herbert Journal of Crystal Growth 566, 126177, 2021 | 5 | 2021 |
Growth of Nanometer-Thick γ-InSe on Si (111) 7× 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices DSH Liu, M Hilse, AR Lupini, JM Redwing, R Engel-Herbert ACS Applied Nano Materials 6 (16), 15029-15037, 2023 | 3 | 2023 |
Self-limiting stoichiometry in SnSe thin films JR Chin, MB Frye, DSH Liu, M Hilse, IC Graham, J Shallenberger, ... Nanoscale 15 (23), 9973-9984, 2023 | 3 | 2023 |
Desorption characteristics of selenium and tellurium thin films DSH Liu, M Hilse, R Engel-Herbert Journal of Vacuum Science & Technology A 40, 053407, 2022 | 3 | 2022 |
Measuring and then eliminating twin domains in SnSe thin films using fast optical metrology and molecular beam epitaxy W Mortelmans, M Hilse, Q Song, SS Jo, K Ye, D Liu, N Samarth, ... ACS nano 16 (6), 9472-9478, 2022 | 3 | 2022 |