| Large quantum-spin-Hall gap in single-layer 1T′ WSe2 P Chen, WW Pai, YH Chan, WL Sun, CZ Xu, DS Lin, MY Chou, ... Nature communications 9 (1), 1-7, 2018 | 154 | 2018 |
| Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si (100)-(2x1) DS Lin, ES Hirschorn, TC Chiang, R Tsu, D Lubben, JE Greene Physical Review B 45 (7), 3494, 1992 | 101 | 1992 |
| Thermal reactions of phosphine with Si (100): a combined photoemission and scanning-tunneling-microscopy study DS Lin, TS Ku, TJ Sheu Surface science 424 (1), 7-18, 1999 | 84 | 1999 |
| Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si (100)-(2× 1) DS Lin, T Miller, TC Chiang Physical review letters 67 (16), 2187, 1991 | 79 | 1991 |
| Charge transfer and asymmetry on Ge (111)-c (2× 8) studied by scanning tunneling microscopy ES Hirschorn, DS Lin, FM Leibsle, A Samsavar, TC Chiang Physical Review B 44 (3), 1403, 1991 | 78 | 1991 |
| X-ray scattering study of Ag/Si (111) buried interface structures H Hong, RD Aburano, DS Lin, H Chen, TC Chiang, P Zschack, ED Specht Physical review letters 68 (4), 507, 1992 | 58 | 1992 |
| Adsorption and thermal reactions of disilane and the growth of Si films on Ge (100)-(2× 1) DS Lin, T Miller, TC Chiang Physical Review B 47 (11), 6543, 1993 | 54 | 1993 |
| Atomistics of Ge deposition on Si (100) by atomic layer epitaxy DS Lin, JL Wu, SY Pan, TC Chiang Physical review letters 90 (4), 046102, 2003 | 49 | 2003 |
| Holography of Ge (111)− c (2× 8) by Surface Core-Level Photoemission MT Sieger, JM Roesler, DS Lin, T Miller, TC Chiang Physical review letters 73 (23), 3117, 1994 | 46 | 1994 |
| Interaction of phosphine with Si (100) from core-level photoemission and real-time scanning tunneling microscopy DS Lin, TS Ku, RP Chen Physical Review B 61 (4), 2799, 2000 | 44 | 2000 |
| Tunable electronic structure and surface states in rare-earth monobismuthides with partially filled shell P Li, Z Wu, F Wu, C Cao, C Guo, Y Wu, Y Liu, Z Sun, CM Cheng, DS Lin, ... Physical Review B 98 (8), 085103, 2018 | 42 | 2018 |
| Adsorption and dissociation of Si2H6 on Ge (001) 2× 1 R Tsu, D Lubben, TR Bramblett, JE Greene, DS Lin, TC Chiang Surface science 280 (3), 265-276, 1993 | 41 | 1993 |
| Boundary-structure determination of Ag/Si (111) interfaces by x-ray diffraction RD Aburano, H Hong, JM Roesler, K Chung, DS Lin, P Zschack, H Chen, ... Physical Review B 52 (3), 1839, 1995 | 38 | 1995 |
| Hydrogen-desorption kinetic measurement on the Si (100)-2× 1: H surface by directly counting desorption sites DS Lin, RP Chen Physical Review B 60 (12), R8461, 1999 | 37 | 1999 |
| Heterojunction confinement on the atomic structure evolution of near monolayer core–shell nanocatalysts in redox reactions of a direct methanol fuel cell TY Chen, GW Lee, YT Liu, YF Liao, CC Huang, DS Lin, TL Lin Journal of Materials Chemistry A 3 (4), 1518-1529, 2015 | 36 | 2015 |
| Growth process of Ge on Si (100)-(2× 1) in atomic-layer epitaxy from Ge 2 H 6 KH Huang, TS Ku, DS Lin Physical Review B 56 (8), 4878, 1997 | 36 | 1997 |
| Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy YC Pan, WH Lee, CK Shu, HC Lin, CI Chiang, H Chang, DS Lin, MC Lee, ... Japanese journal of applied physics 38 (2R), 645, 1999 | 34 | 1999 |
| Surface segregation and growth‐mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source molecular beam epitaxy from Si2H6 R Tsu, HZ Xiao, YW Kim, MA Hasan, HK Birnbaum, JE Greene, DS Lin, ... Journal of applied physics 75 (1), 240-247, 1994 | 33 | 1994 |
| Si indiffusion on Ge (100)-(2× 1) studied by core-level photoemission DS Lin, T Miller, TC Chiang Physical Review B 45 (19), 11415, 1992 | 33 | 1992 |
| C60 encapsulation of the Si(111)‐(7×7) surface H Hong, WE McMahon, P Zschack, DS Lin, RD Aburano, H Chen, ... Applied physics letters 61 (26), 3127-3129, 1992 | 30 | 1992 |
