| GaN-on-Si power technology: Devices and applications KJ Chen, O Häberlen, A Lidow, C lin Tsai, T Ueda, Y Uemoto, Y Wu IEEE Transactions on Electron Devices 64 (3), 779-795, 2017 | 1210 | 2017 |
| GaN transistors for efficient power conversion A Lidow, M De Rooij, J Strydom, D Reusch, J Glaser John Wiley & Sons, 2019 | 1039 | 2019 |
| C. l. Tsai, T. Ueda, Y. Uemoto, and Y. Wu,“GaN-on-Si power technology: Devices and applications,” KJ Chen, O Häberlen, A Lidow IEEE Transactions on Electron Devices 64 (3), 779-795, 2017 | 102 | 2017 |
| Is it the end of the road for silicon in power conversion? A Lidow 2010 6th International Conference on Integrated Power Electronics Systems, 1-8, 2010 | 76 | 2010 |
| Gallium nitride (GaN) technology overview A Lidow, J Strydom, M de Rooij, Y Ma white paper of EPC (WP001), 2012 | 74 | 2012 |
| A new family of GaN transistors for highly efficient high frequency DC-DC converters D Reusch, J Strydom, A Lidow 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 1979-1985, 2015 | 55 | 2015 |
| GaN: A Reliable Future in Power Conversion: Dramatic performance improvements at a lower cost A Lidow, J Strydom, R Strittmatter, C Zhou IEEE Power Electronics Magazine 2 (1), 20-26, 2015 | 38 | 2015 |
| eGaN FET drivers and layout considerations A Lidow, J Strydom EPC Corporation, 2016 | 37 | 2016 |
| GaN as a displacement technology for silicon in power management A Lidow 2011 ieee energy conversion congress and exposition, 1-6, 2011 | 37 | 2011 |
| Single-event and radiation effect on enhancement mode gallium nitride FETs A Lidow, A Nakata, M Rearwin, J Strydom, AM Zafrani 2014 IEEE Radiation Effects Data Workshop (REDW), 1-7, 2014 | 35 | 2014 |
| GaN transistors—Giving new life to Moore's Law A Lidow 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 32 | 2015 |
| Thermal evaluation of chip-scale packaged gallium nitride transistors D Reusch, J Strydom, A Lidow IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 738-746, 2016 | 30 | 2016 |
| Monolithic integration of GaN transistors for higher efficiency and power density in DC-DC converters D Reusch, J Strydom, A Lidow Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015 | 29 | 2015 |
| GaN technology overview A Lidow, J Strydom, M de Rooij, D Reusch EPC White Paper, 2012 | 29 | 2012 |
| GaN Power Devices and Applications A Lidow Power Conversion Publications, 2022 | 26 | 2022 |
| Enhancement mode gallium nitride transistor reliability R Strittmatter, C Zhou, A Lidow, Y Ma 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 1409-1413, 2015 | 22 | 2015 |
| Gallium nitride transistor packaging advances and thermal modeling J Strydom, M de Rooij, A Lidow EDN China, 1-13, 2012 | 22 | 2012 |
| Enhancement mode gallium nitride transistor reliability A Lidow, R Strittmatter, C Zhou, Y Ma 2015 IEEE International Reliability Physics Symposium, 2E. 1.1-2E. 1.5, 2015 | 21 | 2015 |
| Driving eGaN FETs in high performance power conversion systems A Lidow, J Strydom, M De Rooij, A Ferencz, R White ECS Transactions 41 (8), 113, 2011 | 21 | 2011 |
| Highly efficient gallium nitride transistors designed for high power density and high output current DC-DC converters D Reusch, J Strydom, A Lidow 2014 International Power Electronics and Application Conference and …, 2014 | 19 | 2014 |
