| Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review Z Ren, H Yu, Z Liu, D Wang, C Xing, H Zhang, C Huang, S Long, H Sun Journal of Physics D: Applied Physics 53 (7), 073002, 2019 | 129 | 2019 |
| AlGaN-based deep ultraviolet micro-LED emitting at 275 nm H Yu, MH Memon, D Wang, Z Ren, H Zhang, C Huang, M Tian, H Sun, ... Optics Letters 46 (13), 3271-3274, 2021 | 106 | 2021 |
| Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier H Yu, Z Ren, H Zhang, J Dai, C Chen, S Long, H Sun Optics express 27 (20), A1544-A1553, 2019 | 63 | 2019 |
| Graded-index separate confinement heterostructure AlGaN nanowires: toward ultraviolet laser diodes implementation H Sun, D Priante, JW Min, RC Subedi, MK Shakfa, Z Ren, KH Li, R Lin, ... ACS Photonics 5 (8), 3305-3314, 2018 | 61 | 2018 |
| Enhanced performance of an AlGaN-based deep-ultraviolet LED having graded quantum well structure H Yu, Q Chen, Z Ren, M Tian, S Long, J Dai, C Chen, H Sun IEEE photonics journal 11 (4), 1-6, 2019 | 52 | 2019 |
| III-nitride deep UV LED without electron blocking layer Z Ren, Y Lu, HH Yao, H Sun, CH Liao, J Dai, C Chen, JH Ryou, J Yan, ... IEEE Photonics Journal 11 (2), 1-11, 2019 | 52 | 2019 |
| Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes Z Liu, H Yu, Z Ren, J Dai, C Chen, H Sun Semiconductor Science and Technology 35 (7), 075021, 2020 | 36 | 2020 |
| β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ... Applied Physics Letters 121 (5), 2022 | 29 | 2022 |
| Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism HC Huang, Z Ren, C Chan, X Li Journal of Materials Research, 1-15, 2021 | 29 | 2021 |
| Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with step-like quantum barriers C Xing, H Yu, Z Ren, H Zhang, J Dai, C Chen, H Sun IEEE journal of quantum electronics 56 (1), 1-6, 2019 | 22 | 2019 |
| A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition A Waseem, Z Ren, HC Huang, K Nguyen, X Wu, X Li physica status solidi (a) 220 (8), 2200616, 2023 | 11 | 2023 |
| Cascaded deep ultraviolet light-emitting diode via tunnel junction H Yu, Z Ren, MH Memon, S Fang, D Wang, Z Liu, H Zhang, F Wu, J Dai, ... Chinese optics letters 19 (8), 082503, 2021 | 11 | 2021 |
| Efficiency droop suppression and light output power enhancement of deep ultraviolet light-emitting diode by incorporating inverted-V-shaped quantum barriers Y Kang, H Yu, Z Ren, C Xing, Z Liu, H Jia, W Guo, H Sun IEEE Transactions on Electron Devices 67 (11), 4958-4962, 2020 | 10 | 2020 |
| Self-rolled-up aluminum nitride-based 3D architectures enabled by record-high differential stress A Khandelwal, Z Ren, S Namiki, Z Yang, N Choudhary, C Li, P Wang, Z Mi, ... ACS Applied Materials & Interfaces 14 (25), 29014-29024, 2022 | 9 | 2022 |
| Nearly efficiency-droop-free AlGaN-based deep-ultraviolet light-emitting diode without electron-blocking layer H Jia, H Yu, Z Ren, C Xing, Z Liu, Y Kang, H Sun Journal of Electronic Packaging 142 (3), 031115, 2020 | 9 | 2020 |
| Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes H Jia, H Yu, Y Kang, Z Ren, MH Memon, W Guo, H Sun, S Long Journal of Applied Physics 129 (13), 2021 | 8 | 2021 |
| Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch Z Ren, HC Huang, H Lee, C Chan, HC Roberts, X Wu, A Waseem, ... Applied Physics Letters 123 (4), 2023 | 5 | 2023 |
| Non-GCA modeling of near threshold IV characteristics of DG MOSFETs Z Ren, Y Taur Solid-State Electronics 166, 107766, 2020 | 4 | 2020 |
| AlN Self-Rolled-Up Microtube Resonators with Multimode Resonances for On-Chip Optomechanical Sensing Y Liu, A Khandelwal, Z Ren, A Wang, X Li, PXL Feng 2024 IEEE 37th International Conference on Micro Electro Mechanical Systems …, 2024 | | 2024 |
| -Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics Z Ren, HC Huang, H Lee, C Chan, HC Roberts, X Wu, A Wassem, W Zhu, ... 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
HAIDING SUNProfessor of University of Science and Technology of ChinaVerified email at ustc.edu.cn
