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Andrew J. Ritenour
Andrew J. Ritenour
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Cited by
Year
Earth-abundant Cu-based chalcogenide semiconductors as photovoltaic absorbers
V Itthibenchapong, RS Kokenyesi, AJ Ritenour, LN Zakharov, ...
Journal of Materials Chemistry C 1 (4), 657-662, 2013
412013
Efficient n-GaAs Photoelectrodes Grown by Close-Spaced Vapor Transport from a Solid Source
AJ Ritenour, RC Cramer, S Levinrad, SW Boettcher
ACS Applied Materials and Interfaces 4 (1), 69-73, 2011
392011
Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics
AJ Ritenour, JW Boucher, R Delancey, AL Greenaway, S Aloni, ...
Energy and Environmental Science, 2014
382014
Electrochemical Nanostructuring of n-GaAs Photoelectrodes
AJ Ritenour, S Levinrad, C Bradley, RC Cramer, SW Boettcher
ACS Nano 7 (8), 6640-6849, 2013
222013
Towards high-efficiency GaAs thin-film solar cells grown via close space vapor transport from a solid source
AJ Ritenour, SW Boettcher
Photovoltaic Specialists Conference (PVSC), 2013 38th IEEE, 000913-000917, 2012
132012
Homojunction GaAs solar cells grown by close space vapor transport
JW Boucher, AJ Ritenour, AL Greenaway, S Aloni, SW Boettcher
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 0460-0464, 2014
112014
Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices
AL Greenaway, AL Davis, JW Boucher, AJ Ritenour, S Aloni, ...
Journal of materials chemistry A 4 (8), 2909-2918, 2016
102016
Low-cost growth of III–V layers on si using close-spaced vapor transport
JW Boucher, AL Greenaway, AJ Ritenour, AL Davis, BF Bachman, S Aloni, ...
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-4, 2015
42015
Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source
JW Boucher, AJ Ritenour, SW Boettcher
Micro-and Nanotechnology Sensors, Systems, and Applications V 8725, 219-225, 2013
42013
GaAs thin films and methods of making and using the same
S Boettcher, A Ritenour, J Boucher, A Greenaway
US Patent 9,368,670, 2016
12016
Laser-textured thin-film semiconductors by melting and ablation
OSE Semonin, DG Patterson, RA Furler, AJ Ritenour
US Patent 11,393,938, 2022
2022
Laser-textured thin-film semiconductors by melting and ablation
OSE Semonin, DG Patterson, RA Furler, AJ Ritenour
US Patent App. 17/687,026, 2022
2022
Color-coded patterns for epitaxial lift-off (elo) films background
AJ Ritenour
US Patent App. 17/483,271, 2022
2022
Self-bypass diode function for gallium arsenide photovoltaic devices
AJ Ritenour, BM Kayes, H Nie, I Kizilyalli
US Patent 11,121,272, 2021
2021
Optoelectronic devices manufactured using different growth substrates
N Jain, AJ Ritenour, RAU Ileana, C Canizares, LD Washington, G He, ...
US Patent 11,075,313, 2021
2021
Methods of manufacturing optoelectronic devices using different growth substrates
N Jain, AJ Ritenour, RAU Ileana, C Canizares, LD Washington, G He, ...
US Patent 10,873,001, 2020
2020
Surface passivation of iii-v optoelectronic devices
AJ Ritenour, BM Kayes
US Patent App. 15/931,513, 2020
2020
Growth structure under a release layer for manufacturing of optoelectronic devices
AJ Ritenour, RAU Ileana, C Canizares, LD Washington, BM Kayes, G He
US Patent 10,811,557, 2020
2020
GaAs thin films and methods of making and using the same
S Boettcher, A Ritenour, J Boucher, A Greenaway
Univ. of Oregon, Eugene, OR (United States), 2016
2016
CLOSE-SPACED VAPOR TRANSPORT AND PHOTOELECTROCHEMISTRY OF GALLIUM ARSENIDE FOR PHOTOVOLTAIC APPLICATIONS
AJ Ritenour
University of Oregon, 2015
2015
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Articles 1–20