Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework (GVJ‐2e method) J Gusakova, X Wang, LL Shiau, A Krivosheeva, V Shaposhnikov, ... physica status solidi (a) 214 (12), 1700218, 2017 | 377 | 2017 |
Ab initio modeling of the structural, electronic, and optical properties of A II B IV C 2 V semiconductors VL Shaposhnikov, AV Krivosheeva, VE Borisenko, JL Lazzari, ... Physical Review B 85 (20), 205201, 2012 | 154 | 2012 |
Electronic properties of semiconducting silicides: fundamentals and recent predictions LI Ivanenko, VL Shaposhnikov, AB Filonov, AV Krivosheeva, ... Thin solid films 461 (1), 141-147, 2004 | 101 | 2004 |
Theoretical study of defect impact on two-dimensional MoS2 AV Krivosheeva, VL Shaposhnikov, VE Borisenko, JL Lazzari, ... Journal of Semiconductors 36 (12), 122002, 2015 | 55 | 2015 |
Structural, electronic and optical properties of II–IV–N2 compounds (II = Be, Zn; IV = Si, Ge) VL Shaposhnikov, AV Krivosheeva, F Arnaud D'Avitaya, JL Lazzari, ... physica status solidi (b) 245 (1), 142-148, 2008 | 46 | 2008 |
Reconstruction of quasi-one-dimensional In∕ Si (111) systems: Charge-and spin-density waves versus bonding X Lopez-Lozano, A Krivosheeva, AA Stekolnikov, L Meza-Montes, ... Physical Review B 73 (3), 035430, 2006 | 40 | 2006 |
Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds AV Krivosheeva, VL Shaposhnikov, FA d’Avitaya, VE Borisenko, ... Journal of Physics: Condensed Matter 21 (4), 045507, 2009 | 36 | 2009 |
Electronic structure of stressed CrSi2 AV Krivosheeva, VL Shaposhnikov, VE Borisenko Materials Science and Engineering: B 101 (1-3), 309-312, 2003 | 30 | 2003 |
Prospects on Mn-doped ZnGeP2 for spintronics AV Krivosheeva, VL Shaposhnikov, VV Lyskouski, VE Borisenko, ... Microelectronics Reliability 46 (9-11), 1747-1749, 2006 | 21 | 2006 |
Effect of stresses in electronic properties of chromium disilicide VL Shaposhnikov, AV Krivosheeva, AE Krivosheev, AB Filonov, ... Microelectronic Engineering 64 (1-4), 219-223, 2002 | 21 | 2002 |
Band structure of Mg2Si and Mg2Ge semiconducting compounds with a strained crystal lattice AV Krivosheeva, AN Kholod, VL Shaposhnikov, AE Krivosheev, ... Semiconductors 36, 496-500, 2002 | 21 | 2002 |
Band gap modifications of two-dimensional defected MoS2 AV Krivosheeva, VL Shaposhnikov, VE Borisenko, JL Lazzari, ... International Journal of Nanotechnology 12 (8-9), 654-662, 2015 | 19 | 2015 |
Electronic properties of thin BaSi2 films with different orientations DB Migas, VO Bogorodz, AV Krivosheeva, VL Shaposhnikov, AB Filonov, ... Japanese Journal of Applied Physics 56 (5S1), 05DA03, 2017 | 17 | 2017 |
Vibrational properties of the quasi-one-dimensional I n/S i (111)−(4× 1) system F Bechstedt, A Krivosheeva, J Furthmüller, AA Stekolnikov Physical Review B 68 (19), 193406, 2003 | 17 | 2003 |
Structure, electronic and optical properties of tin sulfide VL Shaposhnikov, AV Krivosheeva, VE Borisenko, JL Lazzari ScienceJet 1 (16), 1-4, 2012 | 16* | 2012 |
Structural, electronic and optical properties of semiconducting rhenium silicide VL Shaposhnikov, AV Krivosheeva, LI Ivanenko, AB Filonov, ... Journal of Physics: Condensed Matter 16 (3), 303, 2004 | 16 | 2004 |
Energy band gap tuning in Te-doped WS2/WSe2 heterostructures A Krivosheeva, V Shaposhnikov, V Borisenko, JL Lazzari Journal of Materials Science 55 (23), 9695-9702, 2020 | 14 | 2020 |
Impact of defects on electronic properties of heterostructures constructed from monolayers of transition metal dichalcogenides VL Shaposhnikov, AV Krivosheeva, VE Borisenko physica status solidi (b) 256 (5), 1800355, 2019 | 14 | 2019 |
Structural, electronic and optical properties of a new binary phase–ruthenium disilicide VL Shaposhnikov, AB Filonov, AV Krivosheeva, LI Ivanenko, ... physica status solidi (b) 242 (14), 2864-2871, 2005 | 10 | 2005 |
First-principle calculations of band-structures and optical properties of SnS, Cu2SnS3 and Cu2ZnSnS4 for photovoltaics VL Shaposhnikov, AV Krivosheeva, VE Borisenko, JL Lazzari ScienceJet 1, 15, 2012 | 8 | 2012 |