| Understanding the threshold voltage instability during OFF-state stress in p-GaN HEMTs L Efthymiou, K Murukesan, G Longobardi, F Udrea, A Shibib, K Terrill IEEE Electron Device Letters 40 (8), 1253-1256, 2019 | 94 | 2019 |
| Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors MA Shibib, FA Lindholm, F Therez IEEE Transactions on Electron Devices 26 (6), 959-965, 1979 | 93 | 1979 |
| The importance of surface recombination and energy-bandgap arrowing in pn-junction silicon solar cells JG Fossum, FA Lindholm, MA Shibib IEEE Transactions on Electron Devices 26 (9), 1294-1298, 1979 | 86 | 1979 |
| An analytic model for minority-carrier transport in heavily doped regions of silicon devices JG Fossum, MA Shibib IEEE Transactions on Electron Devices 28 (9), 1018-1025, 1981 | 77 | 1981 |
| Nature and location of interface traps in RF LDMOS due to hot carriers T Nigam, A Shibib, S Xu, H Safar, L Steinberg Microelectronic Engineering 72 (1-4), 71-75, 2004 | 37 | 2004 |
| Lateral MOS-gated power devices-a unified view MN Darwish, MA Shibib IEEE transactions on Electron Devices 38 (7), 1600-1604, 1991 | 37 | 1991 |
| 60 V rating split gate trench MOSFETs having best-in-class specific resistance and figure-of-merit C Park, S Havanur, A Shibib, K Terrill 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 30 | 2016 |
| High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications S Xu, F Baiocchi, H Safar, J Lott, A Shibib, Z Xie, T Nigam, B Jones, ... IEE Proceedings-Circuits, Devices and Systems 151 (3), 215-218, 2004 | 30 | 2004 |
| On the deionization of impurities as an explanation for excess intrinsic carrier density in heavily doped silicon MA Shibib, FA Lindholm IEEE Transactions on Electron Devices 27 (7), 1304-1306, 1980 | 22 | 1980 |
| Control of hot carrier degradation in LDMOS devices by a dummy gate field plate: Experimental demonstration S Xu, Z Xie 2004 Proceedings of the 16th International Symposium on Power Semiconductor …, 2004 | 17 | 2004 |
| High performance RF power LDMOSFET technology for 2.1 GHz power amplifier applications S Xu, A Shibib, Z Xie, H Safar, J Lott, D Farrel, M Mastrapasqua IEEE MTT-S International Microwave Symposium Digest, 2003 1, 217-220, 2003 | 14 | 2003 |
| Vertical sense devices in vertical trench MOSFET MA SHIBIB, W Zhang US Patent 10,234,486, 2019 | 13 | 2019 |
| A New 200 V Dual Trench MOSFET With Stepped Oxide for Ultra Low RDS(on) C Park, M Azam, G Dengel, A Shibib, K Terrill 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 12 | 2019 |
| Semiconductor device with non-uniform trench oxide layer C Park, A Shibib, K Terrill US Patent 9,673,314, 2017 | 10 | 2017 |
| Observation and analysis of negative resistance in the forward IV characteristics of dielectrically isolated high-voltage gated diode switches MA Shibib, CB Ziemer IEEE transactions on electron devices 33 (7), 1062-1066, 1986 | 9 | 1986 |
| Split gate semiconductor with non-uniform trench oxide MA SHIBIB, A Misbah, C Park, K Terrill US Patent 11,189,702, 2021 | 7 | 2021 |
| High-electron-mobility transistor with buried interconnect A Shibib, K Terrill, Y Ding, J Yang US Patent 10,665,711, 2020 | 5 | 2020 |
| Vertical sense devices in vertical trench MOSFET MA SHIBIB, W Zhang US Patent 10,444,262, 2019 | 5 | 2019 |
| High-electron-mobility transistor devices A Shibib, K Terrill US Patent 10,224,426, 2019 | 5 | 2019 |
| Vertical sense devices in vertical trench MOSFET MA SHIBIB, W Zhang US Patent 10,527,654, 2020 | 3 | 2020 |
