| Method of forming green light emitting diode in silicon carbide JA Edmond, AV Suvorov US Patent 5,604,135, 1997 | 270 | 1997 |
| 6H‐silicon carbide light emitting diodes and UV photodiodes J Edmond, H Kong, A Suvorov, D Waltz, C Carter, Jr physica status solidi (a) 162 (1), 481-491, 1997 | 105 | 1997 |
| High temperature ion implantation of nitride based HEMTs A Suvorov, ST Sheppard US Patent 7,875,537, 2011 | 89 | 2011 |
| Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion A Suvorov, JW Palmour, R Singh US Patent 6,107,142, 2000 | 77 | 2000 |
| Methods of fabricating silicon nitride regions in silicon carbide and resulting structures AV Suvorov US Patent 7,476,594, 2009 | 66 | 2009 |
| Methods of fabricating silicon carbide power devices by controlled annealing A Suvorov, JW Palmour, R Singh US Patent 6,100,169, 2000 | 66 | 2000 |
| The global case fatality rate of coronavirus disease 2019 by continents and national income: A meta‐analysis R Abou Ghayda, KH Lee, YJ Han, S Ryu, SH Hong, S Yoon, GH Jeong, ... Journal of medical virology 94 (6), 2402-2413, 2022 | 65 | 2022 |
| SiC device technology: remaining issues JW Palmour, LA Lipkin, R Singh, DB Slater Jr, AV Suvorov, CH Carter Jr Diamond and Related Materials 6 (10), 1400-1404, 1997 | 62 | 1997 |
| 4H-SiC self-aligned implant-diffused structure for power DMOSFETs AV Suvorov, LA Lipkin, GM Johnson, R Singh, JW Palmour Materials Science Forum 338, 1275-1278, 2000 | 61 | 2000 |
| High temperature high-dose implantation of aluminum in 4H-SiC NS Saks, AV Suvorov, DC Capell Applied physics letters 84 (25), 5195-5197, 2004 | 60 | 2004 |
| Damage and aluminum distributions in SiC during ion implantation and annealing NG Chechenin, KK Bourdelle, AV Suvorov, AX Kastilio-Vitloch Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1992 | 55 | 1992 |
| Low temperature formation of backside ohmic contacts for vertical devices DB Slater Jr, A Suvorov US Patent 6,803,243, 2004 | 48 | 2004 |
| Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation IO Usov, AA Suvorova, VV Sokolov, YA Kudryavtsev, AV Suvorov Journal of applied physics 86 (11), 6039-6042, 1999 | 41 | 1999 |
| Transport properties of ion-implanted and chemically doped polyaniline films AN Aleshin, NB Mironkov, AV Suvorov, JA Conklin, TM Su, RB Kaner Physical Review B 54 (16), 11638, 1996 | 41 | 1996 |
| LED fabrication via ion implant isolation Y Wu, GH Negley, DB Slater Jr, VF Tsvetkov, A Suvorov US Patent 7,338,822, 2008 | 40 | 2008 |
| Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling AV Suvorov, V Pala US Patent 9,768,259, 2017 | 39 | 2017 |
| Demonstration of a 6H-SiC CMOS technology DB Slater, GM Johnson, LA Lipkin, AV Suvorov, JW Palmour 1996 54th Annual Device Research Conference Digest, 162-163, 1996 | 39 | 1996 |
| Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices ST Sheppard, AV Suvorov US Patent App. 11/556,871, 2008 | 36 | 2008 |
| Low temperature formation of backside ohmic contacts for vertical devices DB Slater Jr, A Suvorov US Patent 6,884,644, 2005 | 35 | 2005 |
| High temperature enhancement-mode NMOS and PMOS devices and circuits in 6H-SiC DB Slater, LA Lipkin, GM Johnson, AV Suvorov, JW Palmour 1995 53rd Annual Device Research Conference Digest, 100-101, 1995 | 33 | 1995 |
В.Г. Махсудов (V.G. Maxsudov)Ташкентская медицинская академияVerified email at tma.uz
