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Isanka Udayani Jayawardhena
Isanka Udayani Jayawardhena
PhD, Physics, Auburn University
Verified email at auburn.edu
Title
Cited by
Cited by
Year
Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors
IU Jayawardhena, RP Ramamurthy, D Morisette, AC Ahyi, R Thorpe, ...
Journal of Applied Physics 129 (7), 2021
102021
Effect of wafer orientation on near-interface oxide traps in 4H-SiC metal-oxide-semiconductor capacitors
IU Jayawardhena, A Jayawardena, T Isaacs-smith, S Dhar
Electrochemical Society Meeting Abstracts 233, 1441-1441, 2018
12018
Silicon Carbide/Aluminum Oxide Field-Effect Transistors
IU Jayawardhena
Auburn University, 2020
2020
Characterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTS
I Jayawardhena, A Jayawardena, CK Jiao, D Morisette, S Dhar
Materials Science Forum 963, 217-221, 2019
2019
Trap Characterization of ALD Al2O3/4H-SiC Metal-Oxide-Semiconductor  Interfaces
IU Jayawardhena, A Ahyi, T Isaacs-smith, RP Ramamurthy, D Morisette, ...
Electrochemical Society Meeting Abstracts 236, 887-887, 2019
2019
Near-interface trap detection by CCDLTS
I Jayawardhena
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