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Eunae Cho
Eunae Cho
Principal Engineer, Data & Information Technology (DIT) Center, Samsung Electronics
samsung.com의 이메일 확인됨
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First-principles study on doping and phase stability of
CK Lee, E Cho, HS Lee, CS Hwang, S Han
Physical Review B 78 (1), 012102, 2008
3392008
First-principles study of point defects in rutile
E Cho, S Han, HS Ahn, KR Lee, SK Kim, CS Hwang
Physical Review B 73 (19), 193202, 2006
2752006
Density and spatial distribution of charge carriers in the intrinsic -type interface
W Son, E Cho, B Lee, J Lee, S Han
Physical Review B 79 (24), 245411, 2009
1712009
Comparative study of electronic structures and dielectric properties of alumina polymorphs by first-principles methods
CK Lee, E Cho, HS Lee, KS Seol, S Han
Physical Review B 76 (24), 245110, 2007
892007
Property database for single-element doping in ZnO obtained by automated first-principles calculations
K Yim, J Lee, D Lee, M Lee, E Cho, HS Lee, HH Nahm, S Han
Scientific reports 7, 40907, 2017
752017
Enhanced amorphous stability of carbon-doped Ge2Sb2Te5: Ab Initio investigation
E Cho, Y Youn, S Han
Applied Physics Letters 99 (18), 183501, 2011
652011
Hydrogen adsorption and carrier generation in LaAlO {sub 3}-SrTiO {sub 3} heterointerfaces: a first-principles study
W Son, E Cho, S Han, J Lee
602010
Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5
E Cho, S Han, D Kim, H Horii, HS Nam
Journal of Applied Physics 109 (4), 043705-043705-10, 2011
562011
Segregation of oxygen vacancy at metal- interfaces
E Cho, B Lee, CK Lee, S Han, SH Jeon, BH Park, YS Kim
Applied Physics Letters 92 (23), 233118, 2008
452008
Ab initio study on the carbon nanotube with various degrees of functionalization
E Cho, H Kim, C Kim, S Han
Chemical physics letters 419 (1-3), 134-138, 2006
392006
Effects of pressure on atomic and electronic structure and crystallization dynamics of amorphous
J Im, E Cho, D Kim, H Horii, J Ihm, S Han
Physical Review B 81 (24), 245211, 2010
372010
Defect visualization of Cu (InGa)(SeS) 2 thin films using DLTS measurement
S Heo, JG Chung, HI Lee, J Lee, JB Park, E Cho, KH Kim, SH Kim, ...
Scientific reports 6 (1), 1-11, 2016
302016
First-principles study on secondary electron emission of MgO surface
Y Cho, C Kim, HS Ahn, E Cho, TE Kim, S Han
Journal of applied physics 101 (8), 083710, 2007
302007
Atomic and electronic structures of amorphous Ge {sub 2} Sb {sub 2} Te {sub 5}; melt-quenched versus ideal glasses
E Cho, WJ Son, S Han, J Im, C Park, J Ihm, DH Kim, H Horii
292010
Atomic and electronic structures of amorphous Ge2Sb2Te5; melt-quenched versus ideal glasses
E Cho, J Im, C Park, WJ Son, DH Kim, H Horii, J Ihm, S Han
Journal of Physics: Condensed Matter 22 (20), 205504, 2010
292010
Capillary flow of amorphous metal for high performance electrode
SY Kim, SJ Kim, SS Jee, JM Park, KH Park, SC Park, EA Cho, JH Lee, ...
Scientific reports 3 (1), 1-7, 2013
262013
Phase stability and electronic structures of stoichiometric tantalum mononitrides
TE Kim, S Han, W Son, E Cho, HS Ahn, S Shin
Computational materials science 44 (2), 577-580, 2008
202008
Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature
HI Lee, JB Park, W Xianyu, K Kim, JG Chung, YK Kyoung, S Byun, ...
Scientific reports 7 (1), 1-8, 2017
192017
Microscopic origin of current degradation of fully-sealed carbon-nanotube field emission display
S Kim, E Cho, S Han, Y Cho, SH Cho, C Kim, J Ihm
Solid state communications 149 (17-18), 670-672, 2009
182009
Molecular dynamics study on low-energy sputtering properties of MgO surfaces
HS Ahn, TE Kim, E Cho, M Ji, CK Lee, S Han, Y Cho, C Kim
Journal of Applied Physics 103 (7), 073518, 2008
162008
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