| Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform HS Mączko, R Kudrawiec, M Gladysiewicz Scientific Reports 6 (1), 34082, 2016 | 65 | 2016 |
| Electromodulation spectroscopy of direct optical transitions in Ge1− xSnx layers under hydrostatic pressure and built-in strain F Dybała, K Żelazna, H Maczko, M Gladysiewicz, J Misiewicz, ... Journal of Applied Physics 119 (21), 2016 | 26 | 2016 |
| Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells HS Mączko, R Kudrawiec, M Gladysiewicz Scientific Reports 9 (1), 3316, 2019 | 9 | 2019 |
| Optical gain sensitivity of BGaAs/GaP quantum wells to admixtures of group III and V atoms HS Mączko, R Kudrawiec, M Gladysiewicz Optical Materials Express 10 (11), 2962-2972, 2020 | 8 | 2020 |
| Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting O Steuer, D Schwarz, M Oehme, J Schulze, H Mączko, R Kudrawiec, ... Journal of Physics: Condensed Matter 35 (5), 055302, 2022 | 6 | 2022 |
| Electronic band structure of semiconductor alloys: From ab initio to k· p via computational alchemy, on example of Ge1-xSnx alloy P Scharoch, N Janik, M Wiśniewski, HS Mączko, M Gładysiewicz, ... Computational Materials Science 187, 110052, 2021 | 6 | 2021 |
| Invariant expansion of the 30-band model and its parameters for III-V compounds K Gawarecki, P Scharoch, M Wiśniewski, J Ziembicki, HS Mączko, ... Physical Review B 105 (4), 045202, 2022 | 5 | 2022 |
| Optical Gain Characteristics of BGaAs/GaP Quantum Wells HS Mączko, R Kudrawiec, M Gladysiewicz IEEE Photonics Journal 12 (4), 1-13, 2020 | 4 | 2020 |
| Growth advancement of GaAs-based BGaInAs alloys emitting at 1.3 μm by molecular beam epitaxy RH El-Jaroudi, KM McNicholas, HS Maczko, R Kudrawiec, SR Bank Crystal Growth & Design 22 (6), 3753-3759, 2022 | 3 | 2022 |
| An AlInAsSb/GaSb superlattice analysis–the digital alloy iduced conduction band states HS Mączko, J Kopaczek, SJ Maddox, AK Rockwell, SD March, ... 2018 International Conference on Numerical Simulation of Optoelectronic …, 2018 | 3 | 2018 |
| Silicon-Integrated Red-Light Optical Gain Medium Based on BGaAs/GaP Quantum Wells HS Mączko, R Kudrawiec, M Gladysiewicz 2020 International Conference on Numerical Simulation of Optoelectronic …, 2020 | 1 | 2020 |
| Designing and analysis of SiGeSn-based quantum wells integrated with Si platform for laser applications HS Mączko, R Kudrawiec, M Gladysiewicz 2017 International Conference on Numerical Simulation of Optoelectronic …, 2017 | 1 | 2017 |
| Modeling of the electronic band structure and the material gain in GeSn-based quantum wells R Kudrawiec, HS Mączko, M Gladysiewicz 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 81-81, 2017 | 1 | 2017 |
| The growth and characterisation of type I GaSb/AlSb superlattice with a thin GaSb layer M Fokt, A Jasik, I Sankowska, HS Mączko, KM Paradowska, K Czuba Opto-Electronics Review 31 (4), 2023 | | 2023 |
| Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells HS Mączko, RH El-Jaroudi, J Kopaczek, SR Bank, R Kudrawiec Optical Materials Express 12 (8), 3118-3131, 2022 | | 2022 |
| Struktura pasmowa i wzmocnienie optyczne studni kwantowych GeSn/Ge H Mączko, M Gładysiewicz, R Kudrawiec Przegląd Elektrotechniczny 93, 2017 | | 2017 |
