| Recent progress in developing Li2S cathodes for Li–S batteries S Li, D Leng, W Li, L Qie, Z Dong, Z Cheng, Z Fan Energy Storage Materials 27, 279-296, 2020 | 139 | 2020 |
| Analysis of surface roughness in Ti/Al/Ni/Au ohmic contact to AlGaN/GaN high electron mobility transistors R Gong, J Wang, S Liu, Z Dong, M Yu, CP Wen, Y Cai, B Zhang Applied Physics Letters 97 (6), 2010 | 122 | 2010 |
| Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015 | 116 | 2015 |
| GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 36 (5), 448-450, 2015 | 100 | 2015 |
| Carbonized cellulose paper as an effective interlayer in lithium-sulfur batteries S Li, G Ren, MNF Hoque, Z Dong, J Warzywoda, Z Fan Applied Surface Science 396, 637-643, 2017 | 92 | 2017 |
| AlGaN/GaN MIS-HEMTs of Very-Low Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator Z Zhang, W Li, K Fu, G Yu, X Zhang, Y Zhao, S Sun, L Song, X Deng, ... IEEE Electron Device Letters 38 (2), 236-239, 2016 | 57 | 2016 |
| The leakage current of the Schottky contact on the mesa edge of AlGaN/GaN heterostructure C Xu, J Wang, H Chen, F Xu, Z Dong, Y Hao, CP Wen IEEE electron device letters 28 (11), 942-944, 2007 | 49 | 2007 |
| Synthesis of three kinds of GaN nanowires through Ga2O3 films’ reaction with ammonia Z Dong, C Xue, H Zhuang, S Wang, H Gao, D Tian, Y Wu, J He Physica E: Low-dimensional Systems and Nanostructures 27 (1-2), 32-37, 2005 | 42 | 2005 |
| Dynamic characterizations of AlGaN/GaN HEMTs with field plates using a double-gate structure G Yu, Y Wang, Y Cai, Z Dong, C Zeng, B Zhang IEEE electron device letters 34 (2), 217-219, 2013 | 32 | 2013 |
| Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si (111) with radio frequency magnetron sputtering C Xue, Q Wei, Z Sun, Z Dong, H Sun, L Shi Nanotechnology 15 (7), 724, 2004 | 25 | 2004 |
| 5.3 A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing Z Dong, S Tan, Y Cai, H Chen, S Liu, J Xu, L Xue, G Yu, Y Wang, D Zhao, ... Electronics letters 49 (3), 221-222, 2013 | 20 | 2013 |
| High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator Z Dong, J Wang, CP Wen, D Gong, Y Li, M Yu, Y Hao, F Xu, B Shen, ... Solid-state electronics 54 (11), 1339-1342, 2010 | 19 | 2010 |
| Design of 0.8–2.7 GHz High Power Class‐F Harmonic‐Tuned Power Amplifier with Parasitic Compensation Circuit Z Cheng, X Xuan, H Ke, G Liu, Z Dong, S Gao Active and Passive Electronic Components 2017 (1), 2543917, 2017 | 18 | 2017 |
| High temperature induced failure in Ti/Al/Ni/Au ohmic contacts on AlGaN/GaN heterostructure Z Dong, J Wang, CP Wen, S Liu, R Gong, M Yu, Y Hao, F Xu, B Shen, ... Microelectronics Reliability 52 (2), 434-438, 2012 | 17 | 2012 |
| Fabrication of large-scale α-Si3N4 nanotubes on Si (1 1 1) by hot-wall chemical-vapor-deposition with the assistance of Ga2O3 Q Wei, C Xue, Z Sun, H Zhuang, W Cao, S Wang, Z Dong Applied surface science 229 (1-4), 9-12, 2004 | 15 | 2004 |
| Ferroconcrete-inspired construction of self-supporting Li2S cathode for high-performance lithium–sulfur batteries S Li, J Jiang, Z Dong, J Wu, Z Cheng, H Zhu, Z Fan, Y Wang, D Leng Microporous and Mesoporous Materials 293, 109822, 2020 | 14 | 2020 |
| Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs R Gong, J Wang, Z Dong, S Liu, M Yu, CP Wen, Y Hao, B Shen, Y Cai, ... Journal of Physics D: Applied Physics 43 (39), 395102, 2010 | 14 | 2010 |
| High efficiency broadband GaN HEMT power amplifier based on three‐frequency point matching method Z Cheng, Z Zhao, H Ke, G Liu, Z Dong, S Gao Microwave and Optical Technology Letters 59 (8), 1850-1855, 2017 | 12 | 2017 |
| 650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric M Hua, C Liu, S Yang, S Liu, Y Lu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 12 | 2015 |
| Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current Z Guodong Gu、 Yong Cai、Zhihong Feng、Bo Liu、 Chunhong Zeng、 Guohao Yu、 Zhihua ... Journal of Semiconductors 33 (6), 064004-3, 2012 | 12 | 2012 |
Kai FuThe University of UtahVerified email at utah.edu
