| Tunable work function in Junctionless Tunnel FETs for performance enhancement RN Goswami, S Poorvasha, B Lakshmi Australian journal of electrical and electronics engineering 15 (3), 80-85, 2018 | 6 | 2018 |
| Influence of structural and doping parameter variations on Si and double gate tunnel FETs: An analysis for RF performance enhancement S Poorvasha, B Lakshmi Pramana 91, 1-8, 2018 | 3 | 2018 |
| Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement S Poorvasha, B Lakshmi Journal of Semiconductors 39 (5), 054001, 2018 | 3 | 2018 |
| Performance of asymmetric gate oxide on gate-drain overlap in Si and Si1−xGexdouble gate tunnel FETs S Poorvasha, B Lakshmi 2016 International Conference on VLSI Systems, Architectures, Technology and …, 2016 | 2 | 2016 |
| Tunnel field effect transistors for digital and analog applications: a review S Poorvasha, M Pown, B Lakshmi Indian Journal of Science and Technology, 2017 | 1 | 2017 |
| Investigation of the Device Electrical Parameters for Homo and Hetero Junction Based TFETs S Poorvasha, B Lakshmi Silicon, 1-10, 2022 | | 2022 |
| Investigation of geometrical and doping parameter variations on GaSb/Si‐based double gate tunnel FETs: A qualitative and quantitative approach for RF performance enhancement P Shanmuganathan, L Balasubramanian International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019 | | 2019 |
| Analytical Approximation of Quantum Mechanical Tunneling and Characterization of Nano-Scale Heterojunction Double Gate Tunnel FETs S Poorvasha, B Lakshmi 2019 International Conference on Manipulation, Automation and Robotics at …, 2019 | | 2019 |
