| 2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications MJ Lee, Y Park, BS Kang, SE Ahn, C Lee, K Kim, W Xianyu, G Stefanovich, ... 2007 IEEE International Electron Devices Meeting, 771-774, 2007 | 277 | 2007 |
| Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/for nonvolatile memory application H Sim, D Choi, D Lee, S Seo, MJ Lee, IK Yoo, H Hwang IEEE electron device letters 26 (5), 292-294, 2005 | 148 | 2005 |
| A skin-like two-dimensionally pixelized full-color quantum dot photodetector J Kim, SM Kwon, YK Kang, YH Kim, MJ Lee, K Han, A Facchetti, MG Kim, ... Science Advances 5 (11), eaax8801, 2019 | 120 | 2019 |
| Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure I Hwang, MJ Lee, GH Buh, J Bae, J Choi, JS Kim, S Hong, YS Kim, ... Applied Physics Letters 97 (5), 2010 | 85 | 2010 |
| High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes SM Kwon, JK Won, JW Jo, J Kim, HJ Kim, HI Kwon, J Kim, S Ahn, YH Kim, ... Science advances 4 (4), eaap9104, 2018 | 60 | 2018 |
| Resistive memory devices and methods of manufacturing the same CB Lee, Y Park, MJ Lee, X Wenxu, BS Kang, SE Ahn, KH Kim US Patent 8,853,759, 2014 | 52 | 2014 |
| Landau damping of dust acoustic waves in a Lorentzian plasma MJ Lee Physics of plasmas 14 (3), 2007 | 50 | 2007 |
| Gasdynamic fusion propulsion system for space exploration T Kammash, MJ Lee Journal of Propulsion and Power 11 (3), 544-553, 1995 | 50 | 1995 |
| IEEE Int. Electron Devices Meet IG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ... Tech. Dig 587, 2004 | 42 | 2004 |
| Properties of TiN–TiC multilayer coatings using plasma-assisted chemical vapor deposition DJ Kim, YR Cho, MJ Lee, JM Hong, YK Kim, KH Lee Surface and Coatings Technology 116, 906-910, 1999 | 40 | 1999 |
| Cognitive sensor and method of operating of the same CHO Seongho, Y Park, E Hwang, M Lee US Patent 9,832,370, 2017 | 39 | 2017 |
| IEEE Int. Electron Devices Meeting HY Lee, PS Chen, TY Wu, YS Chen, CC Wang, PJ Tzeng, CH Lin, F Chen, ... Electron. Devices Meeting 9, 11, 2005 | 39 | 2005 |
| Role of hydrogen in active layer of oxide-semiconductor-based thin film transistors HY Noh, J Kim, JS Kim, MJ Lee, HJ Lee Crystals 9 (2), 75, 2019 | 34 | 2019 |
| Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State … MJ Lee, GS Park, DH Seo, SM Kwon, HJ Lee, JS Kim, MK Jung, CY You, ... ACS applied materials & interfaces 10 (35), 29757-29765, 2018 | 32 | 2018 |
| Resistive random access memories and methods of manufacturing the same KH Kim, Y Park, MJ Lee, X Wenxu, SE Ahn, CB Lee US Patent 8,169,053, 2012 | 29 | 2012 |
| Stackable All-Oxide-Based Nonvolatile Memory With Formula Not Shown Antifuse and Formula Not Shown Diode SF Ahn, BS Kang, KH Kim, MJ Lee, CB Lee, G Stefanovich, CJ Kim, ... IEEE ELECTRON DEVICE LETTERS 30 (5), 550-552, 2009 | 25 | 2009 |
| Adv. Mater.(Weinheim, Ger.) MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... | 23 | 2007 |
| Preparation of doxorubicin-containing chitosan microspheres for transcatheter arterial chemoembolization of hepatocellular carcinoma JS Kim, BK Kwak, HJ Shim, YC Lee, HW Baik, MJ Lee, SM Han, SH Son, ... Journal of microencapsulation 24 (5), 408-419, 2007 | 22 | 2007 |
| Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor HJ Lee, K Abe, HY Noh, JS Kim, H Lee, MJ Lee Scientific Reports 9 (1), 11977, 2019 | 21 | 2019 |
| Dependence of neutron yield on the deuterium filling pressure in a plasma focus device HJ Woo, KS Chung, MJ Lee Plasma physics and controlled fusion 46 (7), 1095, 2004 | 21 | 2004 |
