| Strain-compensated (Ga, In) N/(Al, Ga) N/GaN multiple quantum wells for improved yellow/amber light emission K Lekhal, B Damilano, HT Ngo, D Rosales, P De Mierry, S Hussain, ... Applied Physics Letters 106 (14), 2015 | 49 | 2015 |
| Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures TH Ngo, B Gil, P Valvin, B Damilano, K Lekhal, P De Mierry Applied Physics Letters 107 (12), 2015 | 43 | 2015 |
| Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction TH Ngo, B Gil, B Damilano, K Lekhal, P De Mierry Superlattices and Microstructures 103, 245-251, 2017 | 30 | 2017 |
| Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J Brault, S Matta, TH Ngo, M Al Khalfioui, P Valvin, M Leroux, B Damilano, ... Journal of Applied Physics 126 (20), 2019 | 25 | 2019 |
| Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies M Bah, D Valente, M Lesecq, N Defrance, M Garcia Barros, JC De Jaeger, ... Scientific Reports 10 (1), 14166, 2020 | 22 | 2020 |
| Synthesis, characterization, and in vitro drug delivery capabilities of (Zn, Al)-based layered double hydroxide nanoparticles VJ Nagaraj, X Sun, J Mehta, M Martin, T Ngo, SK Dey Journal of Nanotechnology 2015, 2015 | 20 | 2015 |
| Influence of the heterostructure design on the optical properties of GaN and Al0. 1Ga0. 9N quantum dots for ultraviolet emission S Matta, J Brault, TH Ngo, B Damilano, M Korytov, P Vennéguès, ... Journal of Applied Physics 122 (8), 2017 | 19 | 2017 |
| Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures TH Ngo, B Gil, B Damilano, P Valvin, A Courville, P de Mierry Journal of Applied Physics 122 (6), 2017 | 18 | 2017 |
| Ultraviolet light emitting diodes using III-N quantum dots J Brault, S Matta, TH Ngo, D Rosales, M Leroux, B Damilano, ... Materials Science in Semiconductor Processing 55, 95-101, 2016 | 16 | 2016 |
| Investigation of AlyGa1− yN/Al0. 5Ga0. 5N quantum dot properties for the design of ultraviolet emitters J Brault, S Matta, TH Ngo, M Korytov, D Rosales, B Damilano, M Leroux, ... Japanese Journal of Applied Physics 55 (5S), 05FG06, 2016 | 16 | 2016 |
| Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si (111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses E Frayssinet, L Nguyen, M Lesecq, N Defrance, M Garcia Barros, ... physica status solidi (a) 217 (7), 1900760, 2020 | 12 | 2020 |
| Enhanced excitonic emission efficiency in porous GaN TH Ngo, B Gil, TV Shubina, B Damilano, S Vezian, P Valvin, J Massies Scientific Reports 8 (1), 15767, 2018 | 12 | 2018 |
| Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission P Ruterana, M Morales, N Chery, TH Ngo, MP Chauvat, K Lekhal, ... Journal of Applied Physics 128 (22), 2020 | 10 | 2020 |
| UVB LEDs grown by molecular beam epitaxy using AlGaN quantum dots J Brault, MA Khalfioui, S Matta, TH Ngo, S Chenot, M Leroux, P Valvin, ... Crystals 10 (12), 1097, 2020 | 10 | 2020 |
| Superconducting Ga/GaSe layers grown by van der Waals epitaxy W Desrat, M Moret, O Briot, TH Ngo, BA Piot, B Jabakhanji, B Gil Materials Research Express 5 (4), 045901, 2018 | 9 | 2018 |
| Photoluminescence properties of (Al, Ga) N nanostructures grown on Al0. 5Ga0. 5N (0001) S Matta, J Brault, TH Ngo, B Damilano, M Leroux, J Massies, B Gil Superlattices and Microstructures 114, 161-168, 2018 | 9 | 2018 |
| Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications AJ Eric N’Dohi, C Sonneville, LV Phung, TH Ngo, P De Mierry, ... AIP Advances 12 (2), 2022 | 8 | 2022 |
| Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters TH Ngo, R Comyn, E Frayssinet, H Chauveau, S Chenot, B Damilano, ... Journal of Crystal Growth 552, 125911, 2020 | 8 | 2020 |
| The universal photoluminescence behaviour of yellow light emitting (Ga, In) N/GaN heterostructures D Rosales, HT Ngo, P Valvin, K Lekhal, B Damilano, P De Mierry, B Gil, ... Superlattices and Microstructures 76, 9-15, 2014 | 8 | 2014 |
| Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes PV Raja, C Raynaud, C Sonneville, AJE N'Dohi, H Morel, LV Phung, ... Microelectronics Journal 128, 105575, 2022 | 7 | 2022 |
Benjamin DamilanoCRHEA-CNRSVerified email at crhea.cnrs.fr
