| Boron-layer silicon photodiodes for high-efficiency low-energy electron detection A Šakić, LK Nanver, TLM Scholtes, CTH Heerkens, T Knežević, ... Solid-state electronics 65, 38-44, 2011 | 53 | 2011 |
| Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection A S̆akić, LK Nanver, G Van Veen, K Kooijman, P Vogelsang, ... 2010 International Electron Devices Meeting, 31.4. 1-31.4. 4, 2010 | 41 | 2010 |
| Limits on thinning of boron layers with/without metal contacting in PureB Si (photo) diodes T Knežević, X Liu, E Hardeveld, T Suligoj, LK Nanver IEEE electron device letters 40 (6), 858-861, 2019 | 22 | 2019 |
| Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions T Knežević, T Suligoj, A Šakić, LK Nanver 2012 Proceedings of the 35th International Convention MIPRO, 36-41, 2012 | 11 | 2012 |
| Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions T Knežević, T Suligoj, A Šakić, LK Nanver 2012 Proceedings of the 35th International Convention MIPRO, 36-41, 2012 | 11 | 2012 |
| Series resistance optimization of high-sensitivity Si-based VUV photodiodes L Shi, LK Nanver, A Šakić, S Nihtianov, T Knežević, A Gottwald, U Kroth 2011 IEEE International Instrumentation and Measurement Technology …, 2011 | 10 | 2011 |
| M-center in low-energy electron irradiated 4H-SiC T Knežević, A Hadžipašić, T Ohshima, T Makino, I Capan Applied physics letters 120 (25), 2022 | 8 | 2022 |
| Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si DT Shivakumar, T Knežević, LK Nanver Journal of Materials Science: Materials in Electronics 32 (6), 7123-7135, 2021 | 8 | 2021 |
| Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon LK Nanver, X Liu, T Knezevic 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018 | 8 | 2018 |
| Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment T Knežević, T Suligoj 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 8 | 2016 |
| Design of passive-quenching active-reset circuit with adjustable hold-off time for single-photon avalanche diodes I Berdalović, Ž Osrečki, F Šegmanović, D Grubišić, T Knežević, T Suligoj 2016 39th International Convention on Information and Communication …, 2016 | 8 | 2016 |
| Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy A Sakic, LK Nanver, G Van Veen, K Kooijman, P Vogelsang, ... Proceedings ICT. Open: Micro Technology and Micro Devices SAFE 2011 …, 2011 | 8 | 2011 |
| 2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment T Knežević, LK Nanver, T Suligoj Physics and Simulation of Optoelectronic Devices XXVI 10526, 266-275, 2018 | 7 | 2018 |
| Silicon drift detectors with the drift field induced by PureB-coated trenches T Knežević, LK Nanver, T Suligoj Photonics 3 (4), 54, 2016 | 7 | 2016 |
| Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range T Knežević, M Krakers, LK Nanver Optical Components and Materials XVII 11276, 73-85, 2020 | 5 | 2020 |
| PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility SD Thammaiah, X Liu, T Knežević, KM Batenburg, AAI Aarnink, ... Solid-state electronics 177, 107938, 2021 | 4 | 2021 |
| Reverse breakdown and light-emission patterns studied in Si PureB SPADs M Krakers, T Kneevic, LK Nanver 2019 42nd International Convention on Information and Communication …, 2019 | 4 | 2019 |
| Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment T Knežević, LK Nanver, T Suligoj Physics and Simulation of Optoelectronic Devices XXVII 10912, 101-108, 2019 | 4 | 2019 |
| Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure I Janeković, T Knežević, T Suligoj, D Grubišić 2015 38th International Convention on Information and Communication …, 2015 | 4 | 2015 |
| Radiation response of large-area 4H-SiC Schottky barrier diodes R Bernat, T Knežević, V Radulović, L Snoj, T Makino, T Ohshima, I Capan Materials 16 (6), 2202, 2023 | 3 | 2023 |
