| Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples B Orfao, G Di Gioia, BG Vasallo, S Pérez, J Mateos, Y Roelens, ... Journal of Applied Physics 132 (4), 2022 | 5 | 2022 |
| GaN Schottky diode on sapphire substrate for THz frequency multiplier applications G Di Gioia, M Samnouni, V Chinni, P Mondal, J Treuttel, M Zegaoui, ... Micro and Nanostructures 164, 107116, 2022 | 3 | 2022 |
| GaN Schottky diode for high power THz generation using multiplier principle G Di Gioia, VK Chinni, M Zegaoui, Y Cordier, A Maestrini, J Treuttel, ... Proc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), 2019 | 3 | 2019 |
| GaN Schottky diodes for THz generation G Di Gioia Université de Lille, 2021 | 2 | 2021 |
| Photonic THz mixers based on iron-doped InGaAs embedded in a plasmonic microcavity C Tannoury, V Merupo, G Di Gioia, V Avramovic, D Troadec, JF Lampin, ... APL Photonics 8 (11), 116101, 2023 | 1 | 2023 |
| High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers G Di Gioia, E Frayssinet, M Samnouni, V Chinni, P Mondal, J Treuttel, ... Journal of Electronic Materials, 1-7, 2023 | | 2023 |
| Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and Astrophysics P Mondal, G D Gioia, H Bouillaud, Y Roelens, T Vacelet, L Gatilova, ... | | 2022 |
| GaAs Schottky Diodes Development for Millimeter Wave Doubler H Bouillaud, P Mondal, G Di Gioia, M Samnouni, M Zegaoui, ... | | 2021 |
| GaN schottky diode on silicon substrate for high power THz multiplier G Di Gioia, M Samnouni, H Bouillaud, P Mondal, J Treuttel, Y Cordier, ... WOCSDICE 2021, 2021 | | 2021 |
| Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations B Orfao, BG Vasallo, D Moro-Melgar, M Zaknoune, G Di Gioia, ... 2021 13th Spanish Conference on Electron Devices (CDE), 94-97, 2021 | | 2021 |
