| Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress S Estandia, N Dix, J Gazquez, I Fina, J Lyu, MF Chisholm, J Fontcuberta, ... ACS Applied Electronic Materials 1 (8), 1449-1457, 2019 | 126 | 2019 |
| Enhanced ferroelectricity in epitaxial Hf0. 5Zr0. 5O2 thin films integrated with Si (001) using SrTiO3 templates J Lyu, I Fina, R Bachelet, G Saint-Girons, S Estandía, J Gázquez, ... Applied Physics Letters 114 (22), 2019 | 72 | 2019 |
| Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001) S Estandía, N Dix, MF Chisholm, I Fina, F Sánchez Crystal Growth & Design 20 (6), 3801-3806, 2020 | 69 | 2020 |
| Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions MC Sulzbach, S Estandía, X Long, J Lyu, N Dix, J Gàzquez, MF Chisholm, ... Advanced Electronic Materials 6 (1), 1900852, 2020 | 54 | 2020 |
| Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices MC Sulzbach, S Estandía, J Gàzquez, F Sánchez, I Fina, J Fontcuberta Advanced Functional Materials 30 (32), 2002638, 2020 | 47 | 2020 |
| Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions M Cervo Sulzbach, H Tan, S Estandía, J Gazquez, F Sanchez, I Fina, ... ACS Applied Electronic Materials 3 (8), 3657-3666, 2021 | 42 | 2021 |
| Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance T Song, S Estandía, H Tan, N Dix, J Gàzquez, I Fina, F Sánchez Advanced Electronic Materials 8 (1), 2100420, 2022 | 26 | 2022 |
| Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf 0.5 Zr 0.5 O 2 thin films S Estandía, J Gazquez, M Varela, N Dix, M Qian, R Solanas, I Fina, ... Journal of Materials Chemistry C 9 (10), 3486-3492, 2021 | 26 | 2021 |
| Rotational polarization nanotopologies in BaTiO 3/SrTiO 3 superlattices S Estandía, F Sánchez, MF Chisholm, J Gazquez Nanoscale 11 (44), 21275-21283, 2019 | 25 | 2019 |
| Improved polarization and endurance in ferroelectric Hf 0.5 Zr 0.5 O 2 films on SrTiO 3 (110) T Song, H Tan, S Estandía, J Gàzquez, M Gich, N Dix, I Fina, F Sánchez Nanoscale 14 (6), 2337-2343, 2022 | 24 | 2022 |
| Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon J Lyu, S Estandía, J Gazquez, MF Chisholm, I Fina, N Dix, J Fontcuberta, ... ACS applied materials & interfaces 10 (30), 25529-25535, 2018 | 21 | 2018 |
| Insights into the atomic structure of the interface of ferroelectric grown epitaxially on S Estandía, T Cao, R Mishra, I Fina, F Sánchez, J Gazquez Physical Review Materials 5 (7), 074410, 2021 | 18 | 2021 |
| Synergetic contributions of chemical doping and epitaxial stress to polarization in ferroelectric HfO2 films T Song, H Tan, AC Robert, S Estandia, J Gázquez, F Sánchez, I Fina Applied Materials Today 29, 101621, 2022 | 17 | 2022 |
| ACS Appl. Electron. Mater. 1, 1449 (2019) S Estandía, N Dix, J Gazquez, I Fina, J Lyu, MF Chisholm, J Fontcuberta, ... | 9 | |
| Enhanced electroresistance endurance of capped Hf0. 5Zr0. 5O2 ultrathin epitaxial tunnel barriers X Long, H Tan, S Estandía, J Gazquez, F Sánchez, I Fina, J Fontcuberta APL Materials 10 (3), 2022 | 8 | 2022 |
| Ferroelectric (hf, zr, la) o2 films T Song, S Estandía, I Fina, F Sánchez Applied Materials Today 29, 101661, 2022 | 7 | 2022 |
| Ferroelectric Hf 0.5 Zr 0.5 O 2 films on SrTiO 3 (111) T Song, S Estandía, N Dix, J Gàzquez, M Gich, I Fina, F Sánchez Journal of Materials Chemistry C 10 (21), 8407-8413, 2022 | 7 | 2022 |
| Effects of Doping, Stress, and Thickness on the Piezoelectric Response and Its Relation with Polarization in Ferroelectric HfO2 H Tan, S Estandía, F Sánchez, I Fina ACS Applied Electronic Materials 5 (12), 6630-6639, 2023 | 1 | 2023 |
| Photovoltaic-driven dual optical writing and non-destructive voltage-less reading of polarization in ferroelectric Hf0. 5Zr0. 5O2 for energy efficient memory devices H Tan, A Quintana, N Dix, S Estandía, J Sort, F Sánchez, I Fina Nano Energy, 109384, 2024 | | 2024 |
| Photovoltaic-Driven Optical Writing and Non-Destructive Reading of Polarization in Ferroelectric Hf0. 5zr0. 5o2 for Energy Efficient Memory Devices H Tan, A Quintana, N Dix, S Estandía, J Sort, F Sánchez, I Fina Available at SSRN 4535448, 0 | | |
Florencio SánchezInstituto de Ciencia de Materiales de Barcelona (ICMAB - CSIC)Verified email at icmab.es
