| Silicon carbide: A unique platform for metal-oxide-semiconductor physics G Liu, BR Tuttle, S Dhar Applied Physics Reviews 2 (2), 2015 | 296 | 2015 |
| Enhanced Inversion Mobility on 4H-SiCUsing Phosphorus and Nitrogen Interface Passivation G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ... IEEE Electron Device Letters 34 (2), 181-183, 2013 | 129 | 2013 |
| High channel mobility 4H-SiC MOSFETs by antimony counter-doping A Modic, G Liu, AC Ahyi, Y Zhou, P Xu, MC Hamilton, JR Williams, ... IEEE Electron Device Letters 35 (9), 894-896, 2014 | 71 | 2014 |
| Wide-gap semiconducting graphene from nitrogen-seeded SiC F Wang, G Liu, S Rothwell, M Nevius, A Tejeda, A Taleb-Ibrahimi, ... Nano letters 13 (10), 4827-4832, 2013 | 40 | 2013 |
| Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces A Modic, YK Sharma, Y Xu, G Liu, AC Ahyi, JR Williams, LC Feldman, ... Journal of electronic materials 43, 857-862, 2014 | 25 | 2014 |
| Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery G Liu, Y Xu, C Xu, A Basile, F Wang, S Dhar, E Conrad, P Mooney, ... Applied Surface Science 324, 30-34, 2015 | 18 | 2015 |
| Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC F Wang, G Liu, S Rothwell, MS Nevius, C Mathieu, N Barrett, A Sala, ... Carbon 82, 360-367, 2015 | 12 | 2015 |
| Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing AC Ahyi, A Modic, C Jiao, Y Zheng, G Liu, LC Feldman, S Dhar Materials Science Forum 821, 693-696, 2015 | 11 | 2015 |
| Evidence for bandgap opening in buckled epitaxial graphene from ultrafast time-resolved terahertz spectroscopy MT Mihnev, F Wang, G Liu, S Rothwell, PI Cohen, LC Feldman, ... Applied Physics Letters 107 (17), 2015 | 9 | 2015 |
| Nanoscale Internal Fields in a Biased Graphene–Insulator–Semiconductor Structure S Rangan, M Kalyanikar, J Duan, G Liu, RA Bartynski, EY Andrei, ... The journal of physical chemistry letters 7 (17), 3434-3439, 2016 | 8 | 2016 |
| The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures L Liu, C Jiao, Y Xu, G Liu, LC Feldman, S Dhar 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 103-106, 2014 | 7 | 2014 |
| Isotropic oxidation by plasma oxidation and investigation of RIE induced effects for development of 4H-SiC trench MOSFETs A Jayawardena, AC Ahyi, G Liu, RG Shaw, S Dhar Materials Science Forum 924, 444-448, 2018 | 5 | 2018 |
| Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS J Taillon, K Gaskell, G Liu, L Feldman, S Dahr, T Zheleva, A Lelis, ... Microscopy and Microanalysis 21 (S3), 1537-1538, 2015 | 4 | 2015 |
| Water absorption in thermally grown oxides on SiC and Si: bulk oxide and interface properties G Liu, C Xu, B Yakshinskiy, L Wielunski, T Gustafsson, J Bloch, S Dhar, ... Applied Physics Letters 105 (19), 191602, 2014 | 3 | 2014 |
| 4H-Silicon Carbide MOSFET G Liu Scholars' Press, 2014 | 3* | 2014 |
| A Facile Access to Novel (5+ 5) Annellated Heterocycles: Synthesis of a Furopyrrole, an Imidazoimidazole and a Pyrroloimidazole P Zlatoidský, E Martinelli, E Svensson, A Pruvost Synthesis 51 (18), 3491-3498, 2019 | 2 | 2019 |
| Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001),(0001¯), and (112¯) surfaces G Liu, C Xu, B Yakshinskiy, L Wielunski, T Gustafsson, J Bloch, S Dhar, ... Applied Physics Letters 106 (12), 2015 | 1 | 2015 |
| Compact accurate scalable model for millimeter wave InP CPW with under-bridge G Liu, H Nakano, K Honjo IEICE Electronics Express 5 (2), 74-80, 2008 | 1 | 2008 |
| Polysilicon Fuse Electrical Voiding Mechanism AP/DFM: Advanced Patterning/Design for Manufacturability G Liu, R Relos, B Janik, R Davis, T Myers, D Allman, J Hall, ... 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2020 | | 2020 |
| Analytical Electron Microscopy of Antimony Doped 4H-SiC/SiO2 and 4H-SiC/Boron and Phosphorus Doped SiO2 Interface Structures in MOS Devices C Klingshirn, J Taillon, G Liu, S Dhar, L Feldman, T Zheleva, A Lelis, ... APS March Meeting Abstracts 2018, L11. 011, 2018 | | 2018 |
Leonard FeldmanProfessor of Physics and Materials ScienceVerified email at rutgers.edu
