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Ryoya Ishikawa
Ryoya Ishikawa
Kyoto University
Verified email at semicon.kuee.kyoto-u.ac.jp
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Year
Electron mobility along< 0001> and< 11̅00> directions in 4H-SiC over a wide range of donor concentration and temperature
R Ishikawa, M Hara, H Tanaka, M Kaneko, T Kimoto
Applied Physics Express 14 (6), 061005, 2021
142021
Physics and Innovative technologies in SiC power devices
T Kimoto, M Kaneko, K Tachiki, K Ito, R Ishikawa, X Chi, D Stefanakis, ...
2021 IEEE International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 2021
42021
Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC
R Ishikawa, H Tanaka, M Kaneko, T Kimoto
physica status solidi (b) 260 (10), 2300275, 2023
12023
Origin of hole mobility anisotropy in 4H-SiC
R Ishikawa, H Tanaka, M Kaneko, T Kimoto
Journal of Applied Physics 135 (7), 2024
2024
High electron mobility along the c-axis in 4H-SiC
R Ishikawa, M Hara, M Kaneko, T Kimoto
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