Semiconductor manufacturing resolution enhancement system and method for simultaneously patterning different feature types K Ghandehari, JY Yang, CA Spence US Patent 6,994,939, 2006 | 216 | 2006 |
Flash memory erase speed by fluorine implant or fluorination Y Wu, JY Yang, H Shiraiwa, CH Ng US Patent 6,445,030, 2002 | 170 | 2002 |
Planar structure for non-volatile memory devices MT Ramsbey, JY Yang, H Shiraiwa, MA Van Buskirk, DM Rogers, ... US Patent 6,541,816, 2003 | 131 | 2003 |
The cosmic ray energy spectrum between 2 PeV and 2 EeV observed with the TALE detector in monocular mode RU Abbasi, M Abe, T Abu-Zayyad, M Allen, R Azuma, E Barcikowski, ... The Astrophysical Journal 865 (1), 74, 2018 | 118 | 2018 |
Source drain implant during ONO formation for improved isolation of SONOS devices JYM Yang, MT Ramsbey, EM Lingunis, Y Wu, T Kamal, Y He, E Hsia, ... US Patent 6,436,768, 2002 | 105 | 2002 |
Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process A Halliyal, MT Ramsbey, H Shiraiwa, JY Yang US Patent 7,115,469, 2006 | 90 | 2006 |
Gamma ray showers observed at ground level in coincidence with downward lightning leaders RU Abbasi, T Abu‐Zayyad, M Allen, E Barcikowski, JW Belz, DR Bergman, ... Journal of Geophysical Research: Atmospheres 123 (13), 6864-6879, 2018 | 80 | 2018 |
Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory Y Wu, JYM Yang, M Ramsbey, EH Lingunis, Y Sun US Patent 6,440,797, 2002 | 79 | 2002 |
Multi-bit silicon nitride charge-trapping non-volatile memory cell JYM Yang, Y Wu US Patent 6,897,533, 2005 | 78 | 2005 |
Study of muons from ultrahigh energy cosmic ray air showers measured with the Telescope Array experiment RU Abbasi, M Abe, T Abu-Zayyad, M Allen, R Azuma, E Barcikowski, ... Physical Review D 98 (2), 022002, 2018 | 75 | 2018 |
Disposable hard mask for memory bitline scaling JY Yang, JP Erhardt, C Tabery, W Qian, MT Ramsbey, J Park, T Kamal US Patent 7,018,868, 2006 | 73 | 2006 |
Search for correlations between the arrival directions of IceCube neutrino events and ultrahigh-energy cosmic rays detected by the Pierre Auger Observatory and the Telescope Array MG Aartsen, K Abraham, M Ackermann, J Adams, JA Aguilar, M Ahlers, ... arXiv preprint arXiv:1511.09408, 2015 | 70 | 2015 |
Semiconductor memory with deuterated materials T Kamal, A Halliyal, M Van Ngo, MT Ramsbey, JY Yang, H Shiraiwa, ... US Patent 6,670,241, 2003 | 63 | 2003 |
Method of simultaneous formation of bitline isolation and periphery oxide JY Yang, MT Ramsbey, H Shiraiwa, MA Van Buskirk, DM Rogers, ... US Patent 6,468,865, 2002 | 58 | 2002 |
Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory Y Wu, JYM Yang, M Ramsbey, EH Lingunis, Y Sun US Patent 6,680,509, 2004 | 57 | 2004 |
Bitline hard mask spacer flow for memory cell scaling JY Yang, MT Ramsbey, J Park, T Kamal, EH Lingunis US Patent 6,927,145, 2005 | 56 | 2005 |
Simultaneous formation of charge storage and bitline to wordline isolation MT Ramsbey, JY Yang, H Shiraiwa, MA Van Buskirk, DM Rogers, ... US Patent 6,555,436, 2003 | 55 | 2003 |
Hard mask process for memory device without bitline shorts JY Yang, MT Ramsbey, H Shiraiwa, Y Wu, E Lingunis, T Kamal US Patent 6,706,595, 2004 | 48 | 2004 |
Mass composition of ultrahigh-energy cosmic rays with the Telescope Array Surface Detector data RU Abbasi, M Abe, T Abu-Zayyad, M Allen, R Azuma, E Barcikowski, ... Physical Review D 99 (2), 022002, 2019 | 45 | 2019 |
Memory wordline hard mask A Halliyal, T Kamal, M Van Ngo, MT Ramsbey, JA Shields, JY Yang, ... US Patent 6,617,215, 2003 | 40 | 2003 |