| AlN/GaN MOS-HEMTs With Thermally GrownPassivation S Taking, D MacFarlane, E Wasige IEEE transactions on electron devices 58 (5), 1418-1424, 2011 | 42 | 2011 |
| Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium S Taking, A Banerjee, H Zhou, X Li, AZ Khokhar, R Oxland, I McGregor, ... Electronics letters 46 (4), 301-302, 2010 | 31 | 2010 |
| AlN/GaN MOS-HEMTs technology S Taking University of Glasgow, 2012 | 26 | 2012 |
| Dielectric and microstructural properties of BaTiO3 and Ba0. 9925Er0. 0075TiO3 ceramics FA Ismail, RAM Osman, MS Idris, S Taking, ZAZ Jamal EPJ Web of Conferences 162, 01051, 2017 | 19 | 2017 |
| Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba 0.5 Sr 0.5 TiO 3 Thin Film I Irzaman, H Darmasetiawan, H Hardhienata, M Hikam, P Arifin, SN Jusoh, ... Atom Indonesia 35 (1), 57-67, 2009 | 19 | 2009 |
| Indoor navigation and localisation application system W Joanne, S Taking, N Isa, K Chao 2016 3rd International Conference on Electronic Design (ICED), 327-331, 2016 | 16 | 2016 |
| New process for low sheet and ohmic contact resistance of AIN/GaN MOS-HEMTs S Taking, AZ Khokhar, D MacFarlane, S Sharabi, AM Dabiran, E Wasige The 5th European Microwave Integrated Circuits Conference, 306-309, 2010 | 13 | 2010 |
| Permittivity and temperature effects on rectification performance of self-switching diodes with different geometrical structures using two-dimensional device simulator NF Zakaria, SR Kasjoo, Z Zailan, MM Isa, S Taking, MKM Arshad Solid-State Electronics 138, 16-23, 2017 | 12 | 2017 |
| An overview of self-switching diode rectifiers using green materials SR Kasjoo, Z Zailan, NF Zakaria, MM Isa, MKM Arshad, S Taking AIP Conference Proceedings 1885 (1), 2017 | 12 | 2017 |
| InGaAs-based planar barrier diode as microwave rectifier NF Zakaria, SR Kasjoo, Z Zailan, MM Isa, MKM Arshad, S Taking Japanese Journal of Applied Physics 57 (6), 064101, 2018 | 10 | 2018 |
| Development of enhancement mode AlGaN/GaN MOS-HEMTs using localized gate-foot oxidation A Banerjee, S Taking, D MacFarlane, A Dabiran, E Wasige The 5th European Microwave Integrated Circuits Conference, 302-305, 2010 | 9 | 2010 |
| The Effect of Different Dielectric Materials in Designing High Performance Metal-Insulator-Metal (MIM) Capacitors. MA Zulkifeli, SN Sabki, S Taking, NA Azmi, SS Jamuar International Journal of Electrical & Computer Engineering (2088-8708) 7 (3), 2017 | 8 | 2017 |
| Rectification performance of self-switching diodes in silicon substrate using device simulator Z Zailan, SR Kasjoo, NF Zakaria, MM Isa, MKM Arshad, S Taking 2016 3rd International Conference on Electronic Design (ICED), 373-376, 2016 | 8 | 2016 |
| Characterization of self-switching diodes as microwave rectifiers using ATLAS simulator Z Zailan, NF Zakaria, MM Isa, S Taking, MKM Arshad, SR Kasjoo 2016 5th International Symposium on Next-Generation Electronics (ISNE), 1-2, 2016 | 8 | 2016 |
| AlN/GaN-based MOS-HEMT technology: processing and device results S Taking, D MacFarlane, E Wasige Active and Passive Electronic Components 2011, 2011 | 8 | 2011 |
| Self-switching diodes as RF rectifiers: evaluation methods and current progress NF Zakaria, SR Kasjoo, MM Isa, Z Zailan, MKM Arshad, S Taking Bulletin of Electrical Engineering and Informatics 8 (2), 396-404, 2019 | 7 | 2019 |
| Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation NF Zakaria, Z Zailan, MM Isa, S Taking, MKM Arshad, SR Kasjoo 2016 5th International Symposium on Next-Generation Electronics (ISNE), 1-2, 2016 | 7 | 2016 |
| Novel high performance AlGaN/GaN based enhancement‐mode metal‐oxide semiconductor high electron mobility transistor R Brown, A Al‐Khalidi, D Macfarlane, S Taking, G Ternent, I Thayne, ... physica status solidi (c) 11 (3‐4), 844-847, 2014 | 6 | 2014 |
| Ferroelectric and relaxor ferroelectric to paralectric transition based on lead magnesium niobate (PMN) materials RAM Osman, MS Idris, ZA Zahid Jamal, S Taking, SN Sabki, P Poopalan, ... Advanced Materials Research 795, 658-663, 2013 | 6 | 2013 |
| DC and RF performance of AlN/GaN MOS-HEMTs S Taking, D MacFarlane, AZ Khokhar, AM Dabiran, E Wasige 2010 Asia-Pacific Microwave Conference, 445-448, 2010 | 6 | 2010 |
