CMOS-based active pixel for low-light-level detection: analysis and measurements N Faramarzpour, MJ Deen, S Shirani, Q Fang, LWC Liu, ... IEEE Transactions on Electron Devices 54 (12), 3229-3237, 2007 | 147 | 2007 |
Light emission from a poly-silicon device with carrier injection engineering K Xu, L Huang, Z Zhang, J Zhao, Z Zhang, LW Snyman, JW Swart Materials Science and Engineering: B 231, 28-31, 2018 | 143 | 2018 |
Carbon nanotubes growth by chemical vapor deposition using thin film nickel catalyst SA Moshkalyov, ALD Moreau, HR Guttiérrez, MA Cotta, JW Swart Materials Science and Engineering: B 112 (2-3), 147-153, 2004 | 90 | 2004 |
Semicondutores: Fundamentos, técnicas e aplicações JW Swart Editora da UNICAMP, Campinas, 2008 | 81 | 2008 |
Micro-Raman stress characterization of polycrystalline silicon films grown at high temperature RC Teixeira, I Doi, MBP Zakia, JA Diniz, JW Swart Materials Science and Engineering: B 112 (2-3), 160-164, 2004 | 68 | 2004 |
Ultralow-power LSI technology with silicon on thin buried oxide (SOTB) CMOSFET T Ishigaki, R Tsuchiya, Y Morita, N Sugii, S Kimura, JW Swart Solid State Circuits Technologies, 146-156, 2010 | 52 | 2010 |
Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in SA Moshkalyov, JA Diniz, JW Swart, PJ Tatsch, M Machida Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997 | 47 | 1997 |
Inductively coupled plasma etchingof in-based compound semiconductorsin CH4/H2/Ar JA Diniz, JW Swart, KB Jung, J Hong, SJ Pearton Solid-State Electronics 42 (11), 1947-1951, 1998 | 44 | 1998 |
Silicon nitride etching in high- and low-density plasmas using mixtures C Reyes-Betanzo, SA Moshkalyov, JW Swart, ACS Ramos Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films 21 (2 …, 2003 | 43 | 2003 |
CF4 plasma etching of materials used in microelectronics manufacturing OV Balachova, MAR Alves, JW Swart, ES Braga, L Cescato Microelectronics journal 31 (3), 213-215, 2000 | 39 | 2000 |
Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC Y Chen, D Xu, K Xu, N Zhang, S Liu, J Zhao, Q Luo, LW Snyman, ... Chinese Physics B 28 (10), 107801, 2019 | 36 | 2019 |
Energia solar fotovoltaica de terceira geração F Ely, J Swart Instituto de Engenheiros Eletricistas e Eletrônicos ou Instituto de …, 2014 | 34 | 2014 |
Silicon nitride deposited by ECR–CVD at room temperature for LOCOS isolation technology MA Pereira, JA Diniz, I Doi, JW Swart Applied surface science 212, 388-392, 2003 | 34 | 2003 |
Platinum thin films deposited on silicon oxide by focused ion beam: characterization and application AR Vaz, MM da Silva, J Leon, SA Moshkalev, JW Swart Journal of materials science 43, 3429-3434, 2008 | 32 | 2008 |
The influence of impurities on cobalt silicide formation WJ Freitas, JW Swart Journal of the Electrochemical Society 138 (10), 3067, 1991 | 30 | 1991 |
Different carbon nanostructured materials obtained in catalytic chemical vapor deposition C Veríssimo, SA Moshkalyo, A Ramos, JL Gonçalves, OL Alves, JW Swart Journal of the Brazilian Chemical Society 17, 1124-1132, 2006 | 29 | 2006 |
Analysis of the etching mechanisms of tungsten in fluorine containing plasmas P Verdonck, J Swart, G Brasseur, P De Geyter Journal of the Electrochemical Society 142 (6), 1971, 1995 | 24 | 1995 |
A multisampling time-domain CMOS imager with synchronous readout circuit FS Campos, O Marinov, N Faramarzpour, F Saffih, MJ Deen, JW Swart Proceedings of the 20th annual conference on Integrated circuits and systems …, 2007 | 23 | 2007 |
Photodetection with gate-controlled lateral BJTs from standard CMOS technology F de Souza Campos, N Faramarzpour, O Marinov, MJ Deen, JW Swart IEEE Sensors Journal 13 (5), 1554-1563, 2012 | 22 | 2012 |
Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching C Fischer, JW Menezes, SA Moshkalev, C Verissimo, AR Vaz, JW Swart Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 21 | 2009 |