Room temperature operation of quantum cascade lasers R Teissier, D Barate, A Vicet, C Alibert, AN Baranov, X Marcadet, ...
Applied physics letters 85 (2), 167-169, 2004
123 2004 Designing III–V multijunction solar cells on silicon JP Connolly, D Mencaraglia, C Renard, D Bouchier
Progress in Photovoltaics: Research and Applications 22 (7), 810-820, 2014
117 2014 Novel heterostructured Ge nanowires based on polytype transformation L Vincent, G Patriarche, G Hallais, C Renard, C Gardès, D Troadec, ...
Nano letters 14 (8), 4828-4836, 2014
78 2014 Interface band gap engineering in InAsSb photodiodes M Carras, JL Reverchon, G Marre, C Renard, B Vinter, X Marcadet, ...
Applied Physics Letters 87 (10), 2005
49 2005 Crystalline, phononic, and electronic properties of heterostructured polytypic Ge nanowires by Raman spectroscopy C Fasolato, M De Luca, D Djomani, L Vincent, C Renard, G Di Iorio, ...
Nano letters 18 (11), 7075-7084, 2018
43 2018 Morphology and composition of Au catalysts on Ge (111) obtained by thermal dewetting S Hajjar, G Garreau, L Josien, JL Bubendorff, D Berling, A Mehdaoui, ...
Physical Review B 84 (12), 125325, 2011
37 2011 Shear-driven phase transformation in silicon nanowires L Vincent, D Djomani, M Fakfakh, C Renard, B Belier, D Bouchier, ...
Nanotechnology 29 (12), 125601, 2018
35 2018 Indium surface segregation in AlSb and GaSb C Renard, X Marcadet, J Massies, I Prévot, R Bisaro, P Galtier
Journal of crystal growth 259 (1-2), 69-78, 2003
29 2003 Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition M Halbwax, C Renard, D Cammilleri, V Yam, F Fossard, D Bouchier, ...
Journal of crystal Growth 308 (1), 26-29, 2007
26 2007 Coupled technique to produce two-dimensional superlattices of nanoparticles C Renard, C Ricolleau, E Fort, S Besson, T Gacoin, JP Boilot
Applied physics letters 80 (2), 300-302, 2002
25 2002 InAs∕ AlAsSb based quantum cascade lasers X Marcadet, C Renard, M Carras, M Garcia, J Massies
Applied Physics Letters 91 (16), 2007
24 2007 Low temperature activation of Au/Ti getter film for application to wafer-level vacuum packaging M Wu, J Moulin, S Lani, G Hallais, C Renard, A Bosseboeuf
Japanese Journal of Applied Physics 54 (3), 030220, 2015
21 2015 Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas C Renard, N Cherkasin, A Jaffré, L Vincent, A Michel, T Molière, ...
Applied Physics Letters 102 (19), 2013
21 2013 High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed C Renard, T Molière, N Cherkashin, J Alvarez, L Vincent, A Jaffré, ...
Scientific Reports 6 (1), 25328, 2016
19 2016 Lateral epitaxial growth of germanium on silicon oxide VD Cammilleri, V Yam, F Fossard, C Renard, D Bouchier, PF Fazzini, ...
Applied Physics Letters 93 (4), 2008
19 2008 Faceting mechanisms of Si nanowires and gold spreading L Vincent, R Boukhicha, C Gardès, C Renard, V Yam, F Fossard, ...
Journal of Materials Science 47, 1609-1613, 2012
18 2012 Design and fabrication of infrared detectors based on lattice-matched InAs0. 91Sb0. 09 on GaSb JL Reverchon, M Carras, G Marre, C Renard, V Berger, B Vinter, ...
Physica E: Low-dimensional Systems and Nanostructures 20 (3-4), 519-522, 2004
18 2004 Molecular beam epitaxy of (Ga, Al) AsSb alloys on InP (0 0 1) substrates C Renard, X Marcadet, J Massies, O Parillaud
Journal of crystal growth 278 (1-4), 193-197, 2005
14 2005 Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devices X Marcadet, C Becker, M Garcia, I Prévot, C Renard, C Sirtori
Journal of crystal growth 251 (1-4), 723-728, 2003
14 2003 Size effect on Ge nanowires growth kinetics by the vapor–liquid–solid mechanism C Renard, R Boukhicha, C Gardès, F Fossard, V Yam, L Vincent, ...
Thin Solid Films 520 (8), 3314-3318, 2012
13 2012