| Device electronics for integrated circuits RS Muller, TI Kamins John Wiley & Sons, 2002 | 2978 | 2002 |
| Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes G Medeiros-Ribeiro, AM Bratkovski, TI Kamins, DAA Ohlberg, RS Williams Science 279 (5349), 353-355, 1998 | 1051 | 1998 |
| Sequence-specific label-free DNA sensors based on silicon nanowires Z Li, Y Chen, X Li, TI Kamins, K Nauka, RS Williams nano letters 4 (2), 245-247, 2004 | 982 | 2004 |
| Strong quantum-confined Stark effect in germanium quantum-well structures on silicon YH Kuo, YK Lee, Y Ge, S Ren, JE Roth, TI Kamins, DAB Miller, JS Harris Nature 437 (7063), 1334-1336, 2005 | 975 | 2005 |
| Hall mobility in chemically deposited polycrystalline silicon TI Kamins Journal of applied physics 42 (11), 4357-4365, 1971 | 633 | 1971 |
| Dopant segregation in polycrystalline silicon MM Mandurah, KC Saraswat, CR Helms, TI Kamins Journal of applied physics 51 (11), 5755-5763, 1980 | 483 | 1980 |
| Photovoltaic retinal prosthesis with high pixel density K Mathieson, J Loudin, G Goetz, P Huie, L Wang, TI Kamins, L Galambos, ... Nature photonics 6 (6), 391-397, 2012 | 479 | 2012 |
| Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms TI Kamins, R Stanley Williams, DP Basile, T Hesjedal, JS Harris Journal of Applied Physics 89 (2), 1008-1016, 2001 | 431 | 2001 |
| Deposition of three-dimensional Ge islands on Si (001) by chemical vapor deposition at atmospheric and reduced pressures TI Kamins, EC Carr, RS Williams, SJ Rosner Journal of Applied Physics 81 (1), 211-219, 1997 | 391 | 1997 |
| Photovoltaic restoration of sight with high visual acuity H Lorach, G Goetz, R Smith, X Lei, Y Mandel, T Kamins, K Mathieson, ... Nature medicine 21 (5), 476-482, 2015 | 350 | 2015 |
| Lithographic positioning of self-assembled Ge islands on Si (001) TI Kamins, RS Williams Applied Physics Letters 71 (9), 1201-1203, 1997 | 333 | 1997 |
| Increased photoluminescence of strain-reduced, high-Sn composition Ge1− xSnx alloys grown by molecular beam epitaxy R Chen, H Lin, Y Huo, C Hitzman, TI Kamins, JS Harris Applied physics letters 99 (18), 2011 | 327 | 2011 |
| Evolution of Ge islands on Si (001) during annealing TI Kamins, G Medeiros-Ribeiro, DAA Ohlberg, R Stanley Williams Journal of Applied Physics 85 (2), 1159-1171, 1999 | 316 | 1999 |
| Growth and structure of chemically vapor deposited Ge nanowires on Si substrates TI Kamins, X Li, RS Williams, X Liu Nano Letters 4 (3), 503-506, 2004 | 283 | 2004 |
| Structure and stability of low pressure chemically vapor‐deposited silicon films TI Kamins, MM Mandurah, KC Saraswat Journal of the Electrochemical Society 125 (6), 927, 1978 | 267 | 1978 |
| Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces MS Islam, S Sharma, TI Kamins, RS Williams Nanotechnology 15 (5), L5, 2004 | 255 | 2004 |
| Optical modulator on silicon employing germanium quantum wells JE Roth, O Fidaner, RK Schaevitz, YH Kuo, TI Kamins, JS Harris, ... Optics Express 15 (9), 5851-5859, 2007 | 249 | 2007 |
| A generalized description of the elastic properties of nanowires A Heidelberg, LT Ngo, B Wu, MA Phillips, S Sharma, TI Kamins, JE Sader, ... Nano letters 6 (6), 1101-1106, 2006 | 241 | 2006 |
| Chemical vapor deposition of Si nanowires nucleated by islands on Si TI Kamins, RS Williams, Y Chen, YL Chang, YA Chang Applied Physics Letters 76 (5), 562-564, 2000 | 231 | 2000 |
| Nano-graphoepitaxy of semiconductors for 3D integration F Crnogorac, DJ Witte, Q Xia, B Rajendran, DS Pickard, Z Liu, A Mehta, ... Microelectronic Engineering 84 (5-8), 891-894, 2007 | 226 | 2007 |
