| Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser F Foulon, E Fogarassy, A Slaoui, C Fuchs, S Unamuno, P Siffert Applied Physics A 45, 361-364, 1988 | 47 | 1988 |
| Ultra-thin ionizing radiation detector and methods for making same F Foulon, S Spirkovitch, L Babadjian US Patent 6,259,099, 2001 | 34 | 2001 |
| Excimer laser induced doping of phosphorus into silicon A Slaoui, F Foulon, P Siffert Journal of applied physics 67 (10), 6197-6201, 1990 | 28 | 1990 |
| Argon-ion laser direct-write Al deposition from trialkylamine alane precursors F Foulon, M Stuke Applied Physics A 56, 283-289, 1993 | 23 | 1993 |
| Optimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser F Foulon, A Slaoui, E Fogarassy, R Stuck, C Fuchs, P Siffert Applied Surface Science 36 (1-4), 384-393, 1989 | 23 | 1989 |
| Laser‐projection‐patterned etching of GaAs in a chlorine atmosphere F Foulon, M Green, FN Goodall, S De Unamuno Journal of applied physics 71 (6), 2898-2907, 1992 | 21 | 1992 |
| Thin CVD diamond detectors with high charge collection efficiency A Brambilla, D Tromson, P Bergonzo, C Mer, F Foulon IEEE Transactions on Nuclear Science 49 (1), 277-280, 2002 | 18 | 2002 |
| A new technique for the fabrication of thin silicon radiation detectors F Foulon, L Rousseau, L Babadjian, S Spirkovitch, A Brambilla, ... IEEE transactions on nuclear science 46 (3), 218-220, 1999 | 18 | 1999 |
| ArF excimer laser doping of boron into silicon F Foulon, A Slaoui, P Siffert Applied Surface Science 43 (1-4), 333-339, 1989 | 15 | 1989 |
| Through‐wafer via fabrication in gallium arsenide by excimer laser projection patterned etching F Foulon, M Green Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 12 | 1993 |
| Boron doping of silicon by excimer laser irradiation in a reactive atmosphere: the incorporation mechanism A Slaoui, F Foulon, R Stuck, P Siffert Applied Physics A 50, 479-484, 1990 | 12 | 1990 |
| Photoabsorption of BCl3 Gas under pulsed ArF excimer laser irradiation A Slaoui, F Foulon, C Fuchs, E Fogarassy, P Siffert Applied Physics A 50, 317-320, 1990 | 12 | 1990 |
| Surface and three-dimensional processing by laser chemical vapor deposition O Lehmann, F Foulon, M Stuke Excimer Lasers, 91-102, 1994 | 10 | 1994 |
| KrF excimer laser projection patterned deposition of aluminum from triethylamine alane as adsorbate precursor F Foulon, M Stuke Applied physics letters 62 (18), 2173-2175, 1993 | 10 | 1993 |
| Conceptualization of arid region radioecology strategies for agricultural ecosystems of the United Arab Emirates (UAE) P Raj, N Padiyath, N Semioshkina, Y Addad, F Foulon, D Francis, G Voigt Science of The Total Environment 832, 154965, 2022 | 9 | 2022 |
| Laser projection-patterned etching of (100) GaAs by gaseous HCl and CH3Cl F Foulon, M Green Applied Physics A 60, 377-381, 1995 | 9 | 1995 |
| Laser projection patterned processing of semiconductors F Foulon, M Green, RA Lawes, J Baker, FN Goodall, G Arthur Applied surface science 54, 291-297, 1992 | 8 | 1992 |
| Transfer of natural radionuclides from soil to Abu Dhabi date palms P Raj, N Padiyath, N Semioshkina, F Foulon, AK Alkaabi, G Voigt, ... Sustainability 14 (18), 11327, 2022 | 7 | 2022 |
| Remote laboratory for e-learning of systems on chip and their applications to nuclear and scientific instrumentation ML Crespo, F Foulon, A Cicuttin, M Bogovac, C Onime, C Sisterna, ... Electronics 10 (18), 2191, 2021 | 7 | 2021 |
| Laser direct-write Al deposition on Si, GaAs and diamond from trialkylamine-alane precursors F Foulon, O Lehmann, M Stuke Applied surface science 69 (1-4), 87-93, 1993 | 7 | 1993 |
Michael StukeVerified email at mpibpc.mpg.de
