| Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors C Dimitrakopoulos, YM Lin, A Grill, DB Farmer, M Freitag, Y Sun, SJ Han, ... Journal of Vacuum Science & Technology B 28 (5), 985-992, 2010 | 144 | 2010 |
| Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene C Dimitrakopoulos, A Grill, TJ McArdle, Z Liu, R Wisnieff, DA Antoniadis Applied Physics Letters 98 (22), 2011 | 67 | 2011 |
| Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same CD Dimitrakopoulos, A Grill, TJ McArdle US Patent 8,354,296, 2013 | 63 | 2013 |
| Semiconductor chip with graphene based devices in an interconnect structure of the chip CD Dimitrakopoulos, GM Cohen, SM Gates, A Grill, TJ McArdle, CY Sung US Patent 8,440,999, 2013 | 39* | 2013 |
| Single work function enablement for silicon nanowire device G Mulfinger, S Beasor, T McArdle US Patent App. 15/869,325, 2019 | 29 | 2019 |
| Cratered Lorentzian response of driven microwave superconducting nanowire-bridged resonators: Oscillatory and magnetic-field induced stochastic states MW Brenner, S Gopalakrishnan, J Ku, TJ McArdle, JN Eckstein, N Shah, ... Physical Review B 83 (18), 184503, 2011 | 21 | 2011 |
| Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle CD Dimitrakopoulos, A Grill, TJ McArdle, JA Ott, RL Wisnierff US Patent 8,476,617, 2013 | 19 | 2013 |
| Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates TJ McArdle, JO Chu, Y Zhu, Z Liu, M Krishnan, CM Breslin, ... Applied Physics Letters 98 (13), 2011 | 19 | 2011 |
| Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels B Chandra, P Chang, GG Freeman, D Guo, JR Holt, A Kumar, TJ McArdle, ... US Patent 8,940,595, 2015 | 18 | 2015 |
| Formation of a graphene layer on a large substrate JO Chu, CD Dimitrakopoulos, MO Freitag, A Grill, TJ McArdle, RL Wisnieff US Patent 8,541,769, 2013 | 18 | 2013 |
| Graphene growth on a non-hexagonal lattice JO Chu, C Dimitrakopoulos, MO Freitag, A Grill, TJ McArdle, CY Sung, ... US Patent 8,877,340, 2014 | 16 | 2014 |
| Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges DH Triyoso, R Carter, J Kluth, K Hempel, M Gribelyuk, L Kang, A Kumar, ... 2016 International Conference on IC Design and Technology (ICICDT), 1-4, 2016 | 15 | 2016 |
| Single crystal source-drain merged by polycrystalline material EC Harley, JR Holt, Y Ke, R Krishnan, TJ McArdle, A Reznicek, ... US Patent 9,123,826, 2015 | 15 | 2015 |
| Carbon nanostructure device fabrication utilizing protect layers JO Chu, CD Dimitrakopoulos, A Grill, TJ McArdle, D Pfeiffer, KL Saenger, ... US Patent 8,828,762, 2014 | 15 | 2014 |
| Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same CD Dimitrakopoulos, A Grill, TJ McArdle US Patent 8,759,824, 2014 | 15 | 2014 |
| Self-aligned sacrificial epitaxial capping for trench silicide GR Mulfinger, LH Vanamurthy, S Beasor, TJ McArdle, JR Holt, H Zhang US Patent 9,812,453, 2017 | 14 | 2017 |
| Uniform junction formation in FinFETs ECT Harley, JR Holt, Y Ke, TJ McArdle, S Mochizuki, A Reznicek US Patent 9,318,608, 2016 | 14 | 2016 |
| Reduced leakage current in Josephson tunnel junctions with codeposited barriers PB Welander, TJ McArdle, JN Eckstein Applied Physics Letters 97 (23), 2010 | 12 | 2010 |
| Epitaxially grown silicon germanium channel FinFET with silicon underlayer K Cheng, ECT Harley, JR Holt, GV Karve, Y Ke, D Liu, TJ McArdle, ... US Patent 9,287,264, 2016 | 10 | 2016 |
| FinFETs with strained channels and reduced on state resistance BV Krishnan, TJ McArdle, RTP Lee, SK Ray, A Sehgal US Patent 10,134,876, 2018 | 9 | 2018 |
Alfred GrillIBMVerified email at us.ibm.com
