| Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector A Kalra, S Vura, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Applied Physics Express 11 (6), 064101, 2018 | 94 | 2018 |
| Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors S Rathkanthiwar, A Kalra, SV Solanke, N Mohta, R Muralidharan, ... Journal of Applied Physics 121 (16), 2017 | 94 | 2017 |
| Polarization-graded AlGaN solar-blind pin detector with 92% zero-bias external quantum efficiency A Kalra, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath IEEE Photonics Technology Letters 31 (15), 1237-1240, 2019 | 48 | 2019 |
| The road ahead for ultrawide bandgap solar-blind UV photodetectors A Kalra, UU Muazzam, R Muralidharan, S Raghavan, DN Nath Journal of Applied Physics 131 (15), 2022 | 31 | 2022 |
| Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes A Kalra, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Semiconductor Science and Technology 35 (3), 035001, 2020 | 24 | 2020 |
| Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111) S Rathkanthiwar, A Kalra, N Remesh, A Bardhan, R Muralidharan, ... Journal of Applied Physics 127 (21), 2020 | 14 | 2020 |
| Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and β-In2Se3/GaN S Solanke, S Rathkanthiwar, A Kalra, RK Mech, M Rangrajan, ... Semiconductor Science and Technology, 2019 | 14 | 2019 |
| Analysis of screw dislocation mediated dark current in Al0. 50Ga0. 50N solar-blind metal-semiconductor-metal photodetectors S Rathkanthiwar, A Kalra, R Muralidharan, DN Nath, S Raghavan Journal of Crystal Growth 498, 35-42, 2018 | 14 | 2018 |
| V-pits-induced photoresponse enhancement in AlGaN UV-B photodetectors on Si (111) S Rathkanthiwar, A Kalra, R Muralidharan, DN Nath, S Raghavan IEEE Transactions on Electron Devices 67 (10), 4281-4287, 2020 | 9 | 2020 |
| Demonstration of high-responsivity epitaxial A Kalra, S Vura, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Appl. Phys. Exp 11 (6), 2018 | 8 | 2018 |
| Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling S Rathkanthiwar, A Kalra, R Muralidharan, DN Nath, S Raghavan Journal of Applied Physics 127 (20), 2020 | 4 | 2020 |
| Ultra-wide Band-gap Semiconductor Heterostructures for UV Opto-electronics A Kalra | | 2022 |
| Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon A Kalra, S Rathkanthiwar, N Remesh, R Muralidharan, D Nath, ... 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | | 2020 |
| Ultra wide Band gap Semiconductor Heterostructures for Deep UV Opto electronics A Kalra Bangalore, 0 | | |
| AlN-on-Sapphire Grating Couplers for Photonics Integrated Circuits PD Mahapatra, H Muthuganesan, R Kallege, S Rathkanthiwar, A Kalra, ... | | |
Digbijoy NathAssociate Professor at Indian Institute of ScienceVerified email at iisc.ac.in
