| Nanometer-scale vertical-sidewall reactive ion etching of InGaAs for 3-D III-V MOSFETs X Zhao, JA del Alamo IEEE Electron Device Letters 35 (5), 521-523, 2014 | 93 | 2014 |
| Nanometer-Scale III-V MOSFETs JA Del Alamo, DA Antoniadis, J Lin, W Lu, A Vardi, X Zhao IEEE Journal of the Electron Devices Society 4 (5), 205-214, 2016 | 87 | 2016 |
| Crystalline silicon core fibres from aluminium core preforms C Hou, X Jia, L Wei, SC Tan, X Zhao, JD Joannopoulos, Y Fink Nature communications 6 (1), 1-6, 2015 | 75 | 2015 |
| A novel digital etch technique for deeply scaled III-V MOSFETs J Lin, X Zhao, DA Antoniadis, JA del Alamo IEEE Electron Device Letters 35 (4), 440-442, 2014 | 75 | 2014 |
| A new self-aligned quantum-well MOSFET architecture fabricated by a scalable tight-pitch process J Lin, X Zhao, T Yu, DA Antoniadis, JA Del Alamo 2013 IEEE International Electron Devices Meeting, 16.2. 1-16.2. 4, 2013 | 72 | 2013 |
| InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ... 2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013 | 61 | 2013 |
| Sub-Thermal Subthreshold Characteristics in Top–Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs X Zhao, A Vardi, JA del Alamo IEEE Electron Device Letters 38 (7), 855-858, 2017 | 60 | 2017 |
| Vertical nanowire InGaAs MOSFETs fabricated by a top-down approach X Zhao, J Lin, C Heidelberger, EA Fitzgerald, JA del Alamo 2013 IEEE International Electron Devices Meeting, 28.4. 1-28.4. 4, 2013 | 55 | 2013 |
| Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts X Zhao, C Heidelberger, EA Fitzgerald, W Lu, A Vardi, JA del Alamo IEEE Transactions on Electron Devices 65 (9), 3762-3768, 2018 | 44 | 2018 |
| InGaAs/InAs heterojunction vertical nanowire tunnel FETs fabricated by a top-down approach X Zhao, A Vardi, JA del Alamo 2014 IEEE International Electron Devices Meeting, 25.5. 1-25.5. 4, 2014 | 42 | 2014 |
| Quantum-size effects in sub 10-nm fin width InGaAs FinFETs A Vardi, X Zhao, JA del Alamo 2015 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2015 | 32 | 2015 |
| Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter W Lu, X Zhao, D Choi, S El Kazzi, JA del Alamo IEEE Electron Device Letters 38 (5), 548-551, 2017 | 31 | 2017 |
| Iii-v mosfets for future cmos JA del Alamo, DA Antoniadis, J Lin, W Lu, A Vardi, X Zhao 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2015 | 30 | 2015 |
| Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors T Srimani, G Hills, X Zhao, D Antoniadis, JA del Alamo, MM Shulaker Applied Physics Letters 115 (6), 063107, 2019 | 25 | 2019 |
| Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation A Vardi, L Kong, W Lu, X Cai, X Zhao, J Grajal, JA del Alamo 2017 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2017 | 21 | 2017 |
| Nanoscale Mo ohmic contacts to III–V fins A Vardi, W Lu, X Zhao, JA del Alamo IEEE Electron Device Letters 36 (2), 126-128, 2014 | 19 | 2014 |
| Excess Off-State Current in InGaAs FinFETs X Zhao, A Vardi, JA del Alamo IEEE Electron Device Letters 39 (4), 476-479, 2018 | 17 | 2018 |
| High aspect ratio InGaAs FinFETs with sub-20 nm fin width A Vardi, J Lin, W Lu, X Zhao, JA del Alamo 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 17 | 2016 |
| InGaAs Double-gate fin-sidewall MOSFET A Vardi, X Zhao, JA del Alamo 72nd Device Research Conference, 219-220, 2014 | 10 | 2014 |
| Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs X Zhao, C Heidelberger, EA Fitzgerald, JA del Alamo IEEE Transactions on Electron Devices 64 (5), 2161-2165, 2017 | 9 | 2017 |
Alon VardiMIT - CambridgeVerified email at mit.edu
