| AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing IEEE Electron Device Letters 29 (7), 661-664, 2008 | 209 | 2008 |
| High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ... IEEE electron device letters 34 (2), 199-201, 2013 | 65 | 2013 |
| Graphene-based quantum capacitance wireless vapor sensors DA Deen, EJ Olson, MA Ebrish, SJ Koester IEEE Sensors Journal 14 (5), 1459-1466, 2013 | 63 | 2013 |
| Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors DA Deen, DF Storm, R Bass, DJ Meyer, DS Katzer, SC Binari, JW Lacis, ... Applied Physics Letters 98 (2), 2011 | 60 | 2011 |
| AlN/GaN HEMTs with high‐κ ALD HfO2 or Ta2O5 gate insulation D Deen, D Storm, D Meyer, DS Katzer, R Bass, S Binari, T Gougousi physica status solidi c 8 (7‐8), 2420-2423, 2011 | 44 | 2011 |
| Highly sensitive micro-Hall devices based on Al0. 12In0. 88Sb∕ InSb heterostructures V Kunets, WT Black, YI Mazur, D Guzun, GJ Salamo, N Goel, TD Mishima, ... Journal of applied physics 98 (1), 2005 | 44 | 2005 |
| Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates DA Deen, DF Storm, DJ Meyer, R Bass, SC Binari, T Gougousi, KR Evans Applied Physics Letters 105 (9), 2014 | 40 | 2014 |
| Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures DA Deen, DF Storm, DS Katzer, DJ Meyer, SC Binari Solid-State Electronics 54 (6), 613-615, 2010 | 39 | 2010 |
| Current focusing in InSb heterostructures AR Dedigama, D Deen, SQ Murphy, N Goel, JC Keay, MB Santos, ... Physica E: Low-dimensional Systems and Nanostructures 34 (1-2), 647-650, 2006 | 37 | 2006 |
| High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised DA Deen, JG Champlain Applied Physics Letters 99 (5), 2011 | 31 | 2011 |
| AlN/GaN insulated gate HEMTs with HfO2 gate dielectric DA Deen, SC Binari, DF Storm, DS Katzer, JA Roussos, JC Hackley, ... Electronics letters 45 (8), 423-424, 2009 | 29 | 2009 |
| Formation of ohmic contacts to ultra‐thin channel AlN/GaN HEMTs T Zimmermann, D Deen, Y Cao, D Jena, HG Xing physica status solidi c 5 (6), 2030-2032, 2008 | 29 | 2008 |
| Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates DF Storm, DA Deen, DS Katzer, DJ Meyer, SC Binari, T Gougousi, ... Journal of crystal growth 380, 14-17, 2013 | 28 | 2013 |
| N‐polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs DJ Meyer, DS Katzer, R Bass, NY Garces, MG Ancona, DA Deen, ... physica status solidi c 9 (3‐4), 894-897, 2012 | 28 | 2012 |
| HfO2‐insulated gate N‐polar GaN HEMTs with high breakdown voltage DJ Meyer, DS Katzer, DA Deen, DF Storm, SC Binari, T Gougousi physica status solidi (a) 208 (7), 1630-1633, 2011 | 23 | 2011 |
| Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures DF Storm, DS Katzer, DA Deen, R Bass, DJ Meyer, JA Roussos, SC Binari, ... Solid-state electronics 54 (11), 1470-1473, 2010 | 23 | 2010 |
| 2.3 nm barrier AlN/GaN HEMTs with insulated gates D Deen, T Zimmermann, Y Cao, D Jena, HG Xing physica status solidi c 5 (6), 2047-2049, 2008 | 22 | 2008 |
| Ultrathin MBE-grown AlN/GaN HEMTs with record high current densities Y Cao, T Zimmermann, D Deen, J Simon, J Bean, N Su, J Zhang, P Fay, ... 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 22 | 2007 |
| Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs DJ Meyer, R Bass, DS Katzer, DA Deen, SC Binari, KM Daniels, ... Solid-State Electronics 54 (10), 1098-1104, 2010 | 21 | 2010 |
| MBE-grown ultra-shallow AlN/GaN HFET technology HG Xing, D Deen, Y Cao, T Zimmermann, P Fay, D Jena ECS Transactions 11 (5), 233, 2007 | 14 | 2007 |
