| A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact R Tiwari, N Parihar, K Thakor, HY Wong, S Motzny, M Choi, V Moroz, ... IEEE Transactions on Electron Devices 66 (5), 2086-2092, 2019 | 46 | 2019 |
| A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling R Tiwari, N Parihar, K Thakor, HY Wong, S Motzny, M Choi, V Moroz, ... IEEE Transactions on Electron Devices 66 (5), 2093-2099, 2019 | 32 | 2019 |
| TCAD-based predictive NBTI framework for sub-20-nm node device design considerations S Mishra, HY Wong, R Tiwari, A Chaudhary, R Rao, V Moroz, ... IEEE Transactions on Electron Devices 63 (12), 4624-4631, 2016 | 29 | 2016 |
| Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs S Deng, Z Zhao, YS Kim, S Duenkel, D MacMahon, R Tiwari, ... IEEE Transactions on Electron Devices 69 (3), 1503-1511, 2022 | 28 | 2022 |
| Modeling channel length scaling impact on NBTI in RMG Si p-FinFETs N Parihar, R Tiwari, S Mahapatra 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 18 | 2018 |
| Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials S Mishra, HY Wong, R Tiwari, A Chaudhary, N Parihar, R Rao, S Motzny, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 6A-3.1-6A-3.8, 2017 | 18 | 2017 |
| Modeling of process (Ge, N) dependence and mechanical strain impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs N Parihar, R Tiwari, C Ndiaye, M Arabi, S Mhira, H Wong, S Motzny, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 17 | 2018 |
| TCAD modeling for reliability P Pfäffli, HY Wong, X Xu, L Silvestri, XW Lin, T Yang, R Tiwari, ... Microelectronics Reliability 88, 1083-1089, 2018 | 10 | 2018 |
| Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs N Choudhury, T Samadder, R Tiwari, H Zhou, RG Southwick, M Wang, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021 | 9 | 2021 |
| TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain R Tiwari, N Parihar, K Thakor, HY Wong, S Mahapatra 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 4 | 2019 |
| Using Long Short-Term Memory (LSTM) Network to Predict Negative-Bias Temperature Instability F Arefaine, M Duan, R Tiwari, A Kapoor, L Smith, S Mahapatra, HY Wong 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 2 | 2021 |
| On the NBTI of Junction-less Nanowire and Novel Operation Scheme to Minimize NBTI Degradation in Analog Circuits HY Wong, M Choi, R Tiwari, S Mahapatra 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 2 | 2018 |
| BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs S Mahapatra, N Parihar, N Choudhury, R Tiwari, T Samadder Recent Advances in PMOS Negative Bias Temperature Instability, 267-285, 2022 | 1 | 2022 |
| TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs R Tiwari, N Choudhury, T Samadder, S Mukhopadhyay, N Parihar, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 0 | | |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)Verified email at ee.iitb.ac.in
