Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing HC Han, F Jazaeri, A D'Amico, A Baschirotto, E Charbon, C Enz ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), 71-74, 2021 | 32 | 2021 |
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures HC Han, F Jazaeri, A D’Amico, Z Zhao, S Lehmann, C Kretzschmar, ... Solid-State Electronics 193, 108296, 2022 | 20 | 2022 |
In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation HC Han, F Jazaeri, A D’Amico, Z Zhao, S Lehmann, C Kretzschmar, ... 2021 Joint International EUROSOI Workshop and International Conference on …, 2021 | 13 | 2021 |
Spin pumping and probe in permalloy dots-topological insulator bilayers HC Han, YS Chen, MD Davydova, PN Petrov, PN Skirdkov, JG Lin, JC Wu, ... Applied Physics Letters 111 (18), 2017 | 12 | 2017 |
Analytical Modeling of Source-to-drain Tunneling Current down to Cryogenic Temperatures HC Han, HL Chiang, IP Radu, C Enz IEEE Electron Device Letters, 2023 | 8 | 2023 |
Spin Pumping and Temperature-Resolved Ferromagnetic Resonance in Permalloy-Topological Insulator Nanostructured Bilayers MD Davydova, AS Pakhomov, AN Kuz’michev, PM Vetoshko, PN Skirdkov, ... Journal of Electronic Materials 48, 1375-1379, 2019 | 7 | 2019 |
A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs HC Han, C Theodorou, G Ghibaudo 25th International Conference on Noise and Fluctuations ICNF 2019, 2019 | 4 | 2019 |
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs HC Han, F Jazaeri, Z Zhao, S Lehmann, C Enz Solid-State Electronics 202, 108608, 2023 | 3 | 2023 |
How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology HL Chiang, RA Hadi, JF Wang, HC Han, JJ Wu, HH Hsieh, JJ Horng, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures HC Han, Z Zhao, S Lehmann, E Charbon, C Enz IEEE Access, 2023 | 2 | 2023 |
The Fano Noise Suppression Factor and the FoM C Enz, H Han 2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2023 | 2 | 2023 |
Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing A Ferraris, E Cha, P Mueller, T Morf, M Prathapan, M Sousa, HC Han, ... 2022 International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2022 | 2 | 2022 |
SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits HC Han, A D’Amico, C Enz IEEE Open Journal of Circuits and Systems 3, 162-167, 2022 | 2 | 2022 |
Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology HC Han, F Jazaeri, A D'Amico, Z Zhao, S Lehmann, C Kretzschmar, ... ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 2 | 2022 |
Comprehensive Design-oriented FDSOI EKV Model HC Han, A D'Amico, C Enz 2022 29th International Conference on Mixed Design of Integrated Circuits …, 2022 | 2 | 2022 |
Cryogenic InGaAs HEMTs with Reduced On-Resistance using Strained Ohmic Contacts E Cha, A Ferraris, P Mueller, HC Han, D Caimi, M Sousa, C Enz, CB Zota 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
22FDX Cryogenic Modeling O Seidel, D Braga, A Pender, HC Han, E Charbon, F Fahim Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States), 2023 | | 2023 |
Analytical Modeling of Cryogenic Subthreshold Currents in 22 nm FDSOI Technology HC Han, Z Zhao, S Lehmann, E Charbon, C Enz IEEE Electron Device Letters, 2023 | | 2023 |
Design of Cryo-CMOS Analog Circuits using the Approach C Enz, HC Han 2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2023 | | 2023 |
Design of Low-power Analog Circuits in Advanced Technology Nodes using the Gm/ID Approach C Enz, H Han, S Berner 2023 Ieee International Symposium On Circuits And Systems, Iscas, 2023 | | 2023 |