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Hung-Chi HAN
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Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing
HC Han, F Jazaeri, A D'Amico, A Baschirotto, E Charbon, C Enz
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), 71-74, 2021
322021
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures
HC Han, F Jazaeri, A D’Amico, Z Zhao, S Lehmann, C Kretzschmar, ...
Solid-State Electronics 193, 108296, 2022
202022
In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation
HC Han, F Jazaeri, A D’Amico, Z Zhao, S Lehmann, C Kretzschmar, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
132021
Spin pumping and probe in permalloy dots-topological insulator bilayers
HC Han, YS Chen, MD Davydova, PN Petrov, PN Skirdkov, JG Lin, JC Wu, ...
Applied Physics Letters 111 (18), 2017
122017
Analytical Modeling of Source-to-drain Tunneling Current down to Cryogenic Temperatures
HC Han, HL Chiang, IP Radu, C Enz
IEEE Electron Device Letters, 2023
82023
Spin Pumping and Temperature-Resolved Ferromagnetic Resonance in Permalloy-Topological Insulator Nanostructured Bilayers
MD Davydova, AS Pakhomov, AN Kuz’michev, PM Vetoshko, PN Skirdkov, ...
Journal of Electronic Materials 48, 1375-1379, 2019
72019
A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs
HC Han, C Theodorou, G Ghibaudo
25th International Conference on Noise and Fluctuations ICNF 2019, 2019
42019
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs
HC Han, F Jazaeri, Z Zhao, S Lehmann, C Enz
Solid-State Electronics 202, 108608, 2023
32023
How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology
HL Chiang, RA Hadi, JF Wang, HC Han, JJ Wu, HH Hsieh, JJ Horng, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
22023
Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures
HC Han, Z Zhao, S Lehmann, E Charbon, C Enz
IEEE Access, 2023
22023
The Fano Noise Suppression Factor and the FoM
C Enz, H Han
2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2023
22023
Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing
A Ferraris, E Cha, P Mueller, T Morf, M Prathapan, M Sousa, HC Han, ...
2022 International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2022
22022
SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits
HC Han, A D’Amico, C Enz
IEEE Open Journal of Circuits and Systems 3, 162-167, 2022
22022
Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology
HC Han, F Jazaeri, A D'Amico, Z Zhao, S Lehmann, C Kretzschmar, ...
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
22022
Comprehensive Design-oriented FDSOI EKV Model
HC Han, A D'Amico, C Enz
2022 29th International Conference on Mixed Design of Integrated Circuits …, 2022
22022
Cryogenic InGaAs HEMTs with Reduced On-Resistance using Strained Ohmic Contacts
E Cha, A Ferraris, P Mueller, HC Han, D Caimi, M Sousa, C Enz, CB Zota
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
22FDX Cryogenic Modeling
O Seidel, D Braga, A Pender, HC Han, E Charbon, F Fahim
Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States), 2023
2023
Analytical Modeling of Cryogenic Subthreshold Currents in 22 nm FDSOI Technology
HC Han, Z Zhao, S Lehmann, E Charbon, C Enz
IEEE Electron Device Letters, 2023
2023
Design of Cryo-CMOS Analog Circuits using the Approach
C Enz, HC Han
2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2023
2023
Design of Low-power Analog Circuits in Advanced Technology Nodes using the Gm/ID Approach
C Enz, H Han, S Berner
2023 Ieee International Symposium On Circuits And Systems, Iscas, 2023
2023
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