| 92–96 GHz GaN power amplifiers M Micovic, A Kurdoghlian, A Margomenos, DF Brown, K Shinohara, ... 2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012 | 157 | 2012 |
| 220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic K Shinohara, A Corrion, D Regan, I Milosavljevic, D Brown, S Burnham, ... 2010 International Electron Devices Meeting, 30.1. 1-30.1. 4, 2010 | 154 | 2010 |
| Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K Shinohara, D Regan, A Corrion, D Brown, S Burnham, PJ Willadsen, ... 2011 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2011 | 138 | 2011 |
| Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique SD Burnham, K Boutros, P Hashimoto, C Butler, DWS Wong, M Hu, ... physica status solidi c 7 (7‐8), 2010-2012, 2010 | 115 | 2010 |
| GaN technology for E, W and G-band applications A Margomenos, A Kurdoghlian, M Micovic, K Shinohara, DF Brown, ... 2014 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2014 | 114 | 2014 |
| InN: A material with photovoltaic promise and challenges E Trybus, G Namkoong, W Henderson, S Burnham, WA Doolittle, ... Journal of Crystal Growth 288 (2), 218-224, 2006 | 109 | 2006 |
| W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE DF Brown, A Williams, K Shinohara, A Kurdoghlian, I Milosavljevic, ... 2011 international electron devices meeting, 19.3. 1-19.3. 4, 2011 | 106 | 2011 |
| High frequency GaN HEMTs for RF MMIC applications M Micovic, DF Brown, D Regan, J Wong, Y Tang, F Herrault, D Santos, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.3. 1-3.3. 4, 2016 | 104 | 2016 |
| W-band GaN MMIC with 842 mW output power at 88 GHz M Micovic, A Kurdoghlian, K Shinohara, S Burnham, I Milosavljevic, M Hu, ... 2010 IEEE MTT-S International Microwave Symposium, 237-239, 2010 | 103 | 2010 |
| Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mmand 112-GHz AL Corrion, K Shinohara, D Regan, I Milosavljevic, P Hashimoto, ... IEEE electron device letters 31 (10), 1116-1118, 2010 | 75 | 2010 |
| Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy SD Burnham, G Namkoong, DC Look, B Clafin, WA Doolittle Journal of Applied Physics 104 (2), 2008 | 74 | 2008 |
| Ka-band LNA MMIC's realized in Fmax> 580 GHz gan hemt technology M Micovic, D Brown, D Regan, J Wong, J Tai, A Kurdoghlian, F Herrault, ... 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2016 | 69 | 2016 |
| Normally-off 5A/1100V GaN-on-silicon device for high voltage applications KS Boutros, S Burnham, D Wong, K Shinohara, B Hughes, D Zehnder, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-3, 2009 | 65 | 2009 |
| High-Speed AlN/GaN MOS-HFETs With Scaled ALD Gate Insulators AL Corrion, K Shinohara, D Regan, I Milosavljevic, P Hashimoto, ... IEEE electron device letters 32 (8), 1062-1064, 2011 | 50 | 2011 |
| Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization SD Burnham, G Namkoong, KK Lee, WA Doolittle Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 49 | 2007 |
| Two stage plasma etching method for enhancement mode GaN HFET SD Burnham, KS Boutros US Patent 8,124,505, 2012 | 48 | 2012 |
| Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic RonE/D-mode GaN HEMTs J Wong, K Shinohara, AL Corrion, DF Brown, Z Carlos, A Williams, Y Tang, ... IEEE Electron Device Letters 38 (1), 95-98, 2016 | 47 | 2016 |
| III-nitrides on oxygen-and zinc-face ZnO substrates G Namkoong, S Burnham, KK Lee, E Trybus, WA Doolittle, M Losurdo, ... Applied Physics Letters 87 (18), 2005 | 47 | 2005 |
| Monolithic integration of enhancement-and depletion-mode AlN/GaN/AlGaN DHFETs by selective MBE regrowth DF Brown, K Shinohara, A Williams, I Milosavljevic, R Grabar, ... IEEE Transactions on Electron Devices 58 (4), 1063-1067, 2011 | 44 | 2011 |
| In situ growth regime characterization of AlN using reflection high energy electron diffraction SD Burnham, W Alan Doolittle Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 44 | 2006 |
K.S. BoutrosVerified email at hrl.com
