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Ali Asghar Orouji
Ali Asghar Orouji
Other namesAli A. Orouji
Verified email at semnan.ac.ir
Title
Cited by
Cited by
Year
New dual-material SG nanoscale MOSFET: analytical threshold-voltage model
MJ Kumar, AA Orouji, H Dhakad
IEEE transactions on Electron Devices 53 (4), 920-922, 2006
1022006
Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions
MJ Kumar, AA Orouji
IEEE Transactions on Electron Devices 52 (7), 1568-1575, 2005
772005
A wideband and reconfigurable filtering slot antenna
MM Fakharian, P Rezaei, AA Orouji, M Soltanpur
IEEE Antennas and Wireless Propagation Letters 15, 1610-1613, 2016
692016
Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization
I Gharibshahian, AA Orouji, S Sharbati
Solar energy materials and solar cells 212, 110581, 2020
652020
Nanoscale triple material double gate (TM-DG) MOSFET for improving short channel effects
P Razavi, AA Orouji
2008 International conference on advances in electronics and micro …, 2008
642008
Leakage current reduction techniques in poly-Si TFTs for active matrix liquid crystal displays: A comprehensive study
AA Orouji, MJ Kumar
IEEE Transactions on device and materials reliability 6 (2), 315-325, 2006
622006
Reconfigurable multiband extended U-slot antenna with switchable polarization for wireless applications
M Fakharian, P Rezaei, A Orouji
IEEE Antennas and Propagation Magazine 57 (2), 194-202, 2015
582015
Design of all-optical XOR and XNOR logic gates based on Fano resonance in plasmonic ring resonators
M Moradi, M Danaie, AA Orouji
Optical and Quantum Electronics 51, 1-18, 2019
572019
A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage
SEJ Mahabadi, AA Orouji, P Keshavarzi, HA Moghadam
Semiconductor Science and Technology 26 (9), 095005, 2011
552011
A novel high-breakdown-voltage SOI MESFET by modified charge distribution
A Aminbeidokhti, AA Orouji, S Rahmaninezhad, M Ghasemian
IEEE transactions on electron devices 59 (5), 1255-1262, 2012
542012
A new partial-SOI LDMOSFET with modified electric field for breakdown voltage improvement
AA Orouji, S Sharbati, M Fathipour
IEEE Transactions on Device and Materials Reliability 9 (3), 449-453, 2009
542009
Design and analysis of an optical full-adder based on nonlinear photonic crystal ring resonators
M Moradi, M Danaie, AA Orouji
Optik 172, 127-136, 2018
522018
Reconfigurable multi-band, graphene-based THz absorber: circuit model approach
T Aghaee, AA Orouji
Results in Physics 16, 102855, 2020
492020
Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model
S Sharbati, I Gharibshahian, AA Orouji
Solar Energy 188, 1-9, 2019
492019
Farsi/Arabic text extraction from video images by corner detection
M Moradi, S Mozaffari, AA Orouji
2010 6th Iranian conference on machine vision and image processing, 1-6, 2010
492010
Detailed simulation study of a dual material gate carbon nanotube field-effect transistor
AA Orouji, Z Arefinia
Physica E: Low-dimensional Systems and Nanostructures 41 (4), 552-557, 2009
492009
Partially cylindrical fin field-effect transistor: a novel device for nanoscale applications
M Mehrad, AA Orouji
IEEE Transactions on Device and Materials Reliability 10 (2), 271-275, 2010
472010
A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications
A Aminbeidokhti, AA Orouji
Physica E: Low-dimensional Systems and Nanostructures 44 (3), 708-713, 2011
462011
Dual material gate oxide stack symmetric double gate MOSFET: improving short channel effects of nanoscale double gate MOSFET
P Razavi, AA Orouji
2008 11th international biennial baltic electronics conference, 83-86, 2008
462008
Investigation of the novel attributes of a carbon nanotube FET with high-κ gate dielectrics
Z Arefinia, AA Orouji
Physica E: Low-dimensional Systems and Nanostructures 40 (10), 3068-3071, 2008
462008
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Articles 1–20