Ashvinee Deo Meshram

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Kondekar Pravin N.Indian Institute of Information Technology Design and Manufacturing , Jabalpur (MP) IndiaVerified email at iiitdmj.ac.in
Bhaskar AwadhiyaAssistant Professor, MIT ManipalVerified email at iiitdmj.ac.in
Gourab DuttaDept. of E&ECE, IIT KharagpurVerified email at ece.iitkgp.ac.in
Tarun Kanti BhattacharyyaProfessor of Electronics and Electrical Communication Engineering Indian Institute of TechnologyVerified email at ece.iitkgp.ernet.in
Anumita SenguptaIndian Institute of Technology KharagpurVerified email at iitkgp.ac.in

Ashvinee Deo Meshram

Research Scholar, IIT Kharagpur

Verified email at iitkgp.ac.in

Semiconductor Device Simulations(Silvaco TCAD)Ga2O3 based Devices Ga2O3 Heterostructures Ga2O3 MODFETs Negative Capacitance


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Effect of ferroelectric thickness variation in undoped HfO2-based negative-capacitance field-effect transistor B Awadhiya, PN Kondekar, AD Meshram Journal of Electronic Materials 48 (10), 6762-6770, 2019	24	2019
Passive voltage amplification in non‐leaky ferroelectric–dielectric heterostructure B Awadhiya, PN Kondekar, AD Meshram Micro & Nano Letters 13 (10), 1399-1403, 2018	16	2018
Understanding negative differential resistance and region of operation in undoped HfO₂-based negative capacitance field effect transistor B Awadhiya, PN Kondekar, AD Meshram Applied Physics A 125, 1-7, 2019	15	2019
Investigating Undoped HfO₂ as Ferroelectric Oxide in Leaky and Non-Leaky FE–DE Heterostructure B Awadhiya, PN Kondekar, AD Meshram Transactions on Electrical and Electronic Materials 20, 467-472, 2019	9	2019
Analogous behavior of FE-DE heterostructure at room temperature and ferroelectric capacitor at Curie temperature B Awadhiya, PN Kondekar, AD Meshram Superlattices and Microstructures 123, 306-310, 2018	8	2018
Normally-Off β-(Al_xGa_1-x)₂O₃/Ga₂O₃ Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta IEEE Transactions on Electron Devices 70 (2), 454-460, 2023	2	2023
Impact of Device Parameters on the Performance of -GaOTEXPRESERVE2 Nanomembrane MESFETs A Sengupta, AD Meshram, TK Bhattacharyya, G Dutta IEEE Transactions on Electron Devices, 2024		2024
ON- and OFF-State Performance of Normally-OFF β-(AlxGa1-x)2O3/Ga2O3 MODFETs with p-GaN Gate AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta IEEE, 2024		2024

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