| Photoelectron diffraction study of Si (001) 2× 1-K surface: Existence of a potassium double layer T Abukawa, S Kono Physical Review B 37 (15), 9097, 1988 | 224 | 1988 |
| Surface electronic structure of a single-domain Si (111) 4× 1-In surface: a synchrotron radiation photoemission study T Abukawa, M Sasaki, F Hisamatsu, T Goto, T Kinoshita, A Kakizaki, ... Surface science 325 (1-2), 33-44, 1995 | 177 | 1995 |
| Surface Core-Level Photoelectron Diffraction from Si Dimers at the Si(001)-( ) Surface EL Bullock, R Gunnella, L Patthey, T Abukawa, S Kono, CR Natoli, ... Physical review letters 74 (14), 2756, 1995 | 138 | 1995 |
| Mixed Ge-Si Dimer Growth at the Ge/Si(001)-( ) Surface L Patthey, EL Bullock, T Abukawa, S Kono, LSO Johansson Physical review letters 75 (13), 2538, 1995 | 125 | 1995 |
| Low energy electron diffraction and X-ray photoelectron spectroscopy studies of the formation of submonolayer interfaces of Sb/Si (111) CY Park, T Abukawa, T Kinoshita, Y Enta, S Kono Japanese journal of applied physics 27 (1R), 147, 1988 | 106 | 1988 |
| Photoelectron diffraction study of the atomic geometry of the Si (111)√ 3×√ 3-Sb surface T Abukawa, CY Park, S Kono Surface science 201 (3), L513-L518, 1988 | 89 | 1988 |
| Angle-scanned photoelectron diffraction J Osterwalder, P Aebi, R Fasel, D Naumovic, P Schwaller, T Kreutz, ... Surface science 331, 1002-1014, 1995 | 81 | 1995 |
| Photoelectron diffraction and low energy electron diffraction studies of Cs, K/Si (001) surfaces T Abukawa, S Kono Surface science 214 (1-2), 141-148, 1989 | 69 | 1989 |
| Initial stage growth of In and A1 on a single-domain Si (001) 2× 1 surface HW Yeom, T Abukawa, M Nakamura, S Suzuki, S Sato, K Sakamoto, ... Surface science 341 (3), 328-334, 1995 | 63 | 1995 |
| Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si (001) M Sasaki, T Abukawa, HW Yeom, M Yamada, S Suzuki, S Sato, S Kono Applied surface science 82, 387-393, 1994 | 59 | 1994 |
| Mg-induced Si (111) 3× 1 structure studied by photoelectron spectroscopy KS An, RJ Park, JS Kim, CY Park, CY Kim, JW Chung, T Abukawa, ... Surface science 337 (1-2), L789-L794, 1995 | 55 | 1995 |
| Low energy electron diffraction and X-ray photoelectron diffraction study of the Cs/Si (001) surface: dependence on Cs coverage T Abukawa, T Okane, S Kono Surface science 256 (3), 370-378, 1991 | 54 | 1991 |
| Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si (001) 2× 1 X Chen, DK Saldin, EL Bullock, L Patthey, LSO Johansson, J Tani, ... Physical Review B 55 (12), R7319, 1997 | 46 | 1997 |
| Atomistic morphology and structure of ethylene-chemisorbed Si (001) 2× 1 surface M Shimomura, M Munakata, A Iwasaki, M Ikeda, T Abukawa, K Sato, ... Surface science 504, 19-27, 2002 | 45 | 2002 |
| Initial interface formation study of the Mg/Si (111) system KS An, RJ Park, JS Kim, CY Park, SB Lee, T Abukawa, S Kono, ... Journal of applied physics 78 (2), 1151-1155, 1995 | 45 | 1995 |
| Structural model for the negative electron affinity surface of O/Cs/Si (001) 2× 1 T Abukawa, S Kono, T Sakamoto Japanese journal of applied physics 28 (2A), L303, 1989 | 44 | 1989 |
| Ag adsorption on a single domain Si (001) 2× 1 surface studied by electron and photoelectron diffraction SM Shivaprasad, T Abukawa, HW Yeom, M Nakamura, S Suzuki, S Sato, ... Surface science 344 (3), L1245-L1251, 1995 | 43 | 1995 |
| Core-level photoemission study of the Si (111) 4× 1-In surface T Abukawa, M Sasaki, F Hisamatsu, M Nakamura, T Kinoshita, A Kakizaki, ... Journal of electron spectroscopy and related phenomena 80, 233-236, 1996 | 42 | 1996 |
| Surface core levels of In adsorption on Si (001) 2× 1 HW Yeom, T Abukawa, Y Takakuwa, Y Mori, T Shimatani, A Kakizaki, ... Physical Review B 54 (7), 4456, 1996 | 41 | 1996 |
| Structures of the ‘nanowire’and 2× n of Bi/Si (001) M Shimomura, K Miki, T Abukawa, S Kono Surface science 447 (1-3), L169-L174, 2000 | 40 | 2000 |
Han Woong YeomProfessor of Physics, POSTECHVerified email at postech.ac.kr
