| Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy C Skierbiszewski, H Turski, G Muziol, M Siekacz, M Sawicka, G Cywiński, ... Journal of Physics D: Applied Physics 47 (7), 073001, 2014 | 66 | 2014 |
| Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy M Siekacz, M Sawicka, H Turski, G Cywiński, A Khachapuridze, P Perlin, ... Journal of Applied Physics 110 (6), 2011 | 54 | 2011 |
| Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers H Turski, M Siekacz, ZR Wasilewski, M Sawicka, S Porowski, ... Journal of crystal growth 367, 115-121, 2013 | 52 | 2013 |
| True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy C Skierbiszewski, G Muziol, K Nowakowski-Szkudlarek, H Turski, ... Applied Physics Express 11 (3), 034103, 2018 | 43 | 2018 |
| Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide G Muziol, H Turski, M Siekacz, S Grzanka, P Perlin, C Skierbiszewski Applied Physics Express 9 (9), 092103, 2016 | 39 | 2016 |
| Stack of two III-nitride laser diodes interconnected by a tunnel junction M Siekacz, G Muziol, M Hajdel, M Żak, K Nowakowski-Szkudlarek, ... Optics Express 27 (4), 5784-5791, 2019 | 38 | 2019 |
| Beyond quantum efficiency limitations originating from the piezoelectric polarization in light-emitting devices G Muziol, H Turski, M Siekacz, K Szkudlarek, L Janicki, M Baranowski, ... Acs Photonics 6 (8), 1963-1971, 2019 | 37 | 2019 |
| Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy G Muziol, H Turski, M Siekacz, P Wolny, S Grzanka, E Grzanka, P Perlin, ... Applied Physics Express 8 (3), 032103, 2015 | 37 | 2015 |
| Growth mechanism of InGaN by plasma assisted molecular beam epitaxy H Turski, M Siekacz, M Sawicka, G Cywinski, M Krysko, S Grzanka, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011 | 35 | 2011 |
| AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy C Skierbiszewski, M Siekacz, H Turski, G Muzioł, M Sawicka, ... Applied physics express 5 (2), 022104, 2012 | 32 | 2012 |
| Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions H Turski, S Bharadwaj, HG Xing, D Jena Journal of Applied Physics 125 (20), 2019 | 31 | 2019 |
| Hydrogen diffusion in GaN: Mg and GaN: Si R Czernecki, E Grzanka, R Jakiela, S Grzanka, C Skierbiszewski, H Turski, ... Journal of Alloys and Compounds 747, 354-358, 2018 | 30 | 2018 |
| Step-flow anisotropy of the m-plane GaN (1 1¯ 00) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy M Sawicka, H Turski, M Siekacz, J Smalc-Koziorowska, M Kryśko, ... Physical Review B 83 (24), 245434, 2011 | 30 | 2011 |
| InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE C Skierbiszewski, M Siekacz, H Turski, G Muzioł, M Sawicka, ... Journal of Vacuum Science & Technology B 30 (2), 2012 | 29 | 2012 |
| Growth mechanisms in semipolar (202¯ 1) and nonpolar m-plane (101¯ 0) algan/gan structures grown by pambe under n-rich conditions M Sawicka, C Cheze, H Turski, J Smalc-Koziorowska, M Kryśko, S Kret, ... Journal of crystal growth 377, 184-191, 2013 | 27 | 2013 |
| True-blue nitride laser diodes grown by plasma-assisted molecular beam epitaxy C Skierbiszewski, M Siekacz, H Turski, G Muziol, M Sawicka, P Wolny, ... Applied Physics Express 5 (11), 112103, 2012 | 27 | 2012 |
| Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface H Turski, F Krzyżewski, A Feduniewicz-Żmuda, P Wolny, M Siekacz, ... Applied Surface Science 484, 771-780, 2019 | 26 | 2019 |
| Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes S Bharadwaj, J Miller, K Lee, J Lederman, M Siekacz, HG Xing, D Jena, ... Optics Express 28 (4), 4489-4500, 2020 | 24 | 2020 |
| Indium incorporation in semipolar (2021) and nonpolar (1010) InGaN grown by plasma assisted molecular beam epitaxy M Sawicka, A Feduniewicz-Żmuda, M Kryśko, H Turski, G Muziol, ... Journal of Crystal Growth 459, 129-134, 2017 | 23 | 2017 |
| Investigation on the origin of luminescence quenching in N-polar (In, Ga) N multiple quantum wells C Cheze, M Siekacz, G Muzioł, H Turski, S Grzanka, M Kryśko, JL Weyher, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 22 | 2013 |
Marcin SiekaczInstytut Wysokich Ciśnień PANZweryfikowany adres z unipress.waw.pl
