| Deep-level optical spectroscopy investigation of N-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga Applied Physics Letters 86 (13), 132104-132104-3, 2005 | 238 | 2005 |
| Optical bandgap widening of p-type Cu2O films by nitrogen doping Y Nakano, S Saeki, T Morikawa Applied Physics Letters 94 (2), 2009 | 210 | 2009 |
| Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga Applied physics letters 88 (17), 172103-172103-3, 2006 | 142 | 2006 |
| enhancement mode metal-oxide semiconductor field-effect transistors Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ... Applied physics letters 84 (15), 2919-2921, 2004 | 137 | 2004 |
| Electrical characterization of band gap states in C-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga Applied Physics Letters 87 (5), 052111-052111-3, 2005 | 107 | 2005 |
| Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors Y Nakano, T Jimbo Applied physics letters 82 (2), 218-220, 2003 | 101 | 2003 |
| III-V hemt devices M Sugimoto, T Kachi, Y Nakano, T Uesugi, H Ueda, N Soejima US Patent 7,777,252, 2010 | 85 | 2010 |
| Electrical activation characteristics of silicon-implanted GaN Y Irokawa, O Fujishima, T Kachi, Y Nakano Journal of applied physics 97 (8), 083505-083505-5, 2005 | 82 | 2005 |
| Origin of visible-light sensitivity in N-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga Chemical Physics 339 (1), 20-26, 2007 | 80 | 2007 |
| Microstructure and Related Phenomena of Multilayer Ceamic Capacitors with Ni-Electrode Y Nakano J. Amer. Ceram. Soc. 32, 119-128, 1993 | 79 | 1993 |
| OXYGEN ADSORPTION AND VDR EFFECT IN(Sr, Ca) TiO3-x BASED CERAMICS Y Nakano, N Ichinose Journal of Materials Research 5 (12), 2910-2922, 1990 | 71 | 1990 |
| Group III nitride semiconductor device T Kachi, Y Nakano, T Uesugi US Patent 7,211,839, 2007 | 58 | 2007 |
| Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers Y Nakano, T Kachi, T Jimbo Applied physics letters 83 (21), 4336-4338, 2003 | 58 | 2003 |
| Visible-blind wide-dynamic-range fast-response self-powered ultraviolet photodetector based on CuI/In-Ga-Zn-O heterojunction N Yamada, Y Kondo, X Cao, Y Nakano Applied Materials Today 15, 153-162, 2019 | 57 | 2019 |
| Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams A Uedono, K Ito, H Nakamori, K Mori, Y Nakano, T Kachi, S Ishibashi, ... Journal of Applied Physics 102 (8), 2007 | 49 | 2007 |
| Interface properties of SiO2/n-GaN metal–insulator–semiconductor structures Y Nakano, T Jimbo Applied physics letters 80 (25), 4756-4758, 2002 | 49 | 2002 |
| Deep-level optical spectroscopy investigation of band gap states in AlGaN/GaN hetero-interfaces Y Nakano, Y Irokawa, M Takeguchi Applied physics express 1 (9), 091101, 2008 | 47 | 2008 |
| Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering Y Nakano, T Morikawa, T Ohwaki, Y Taga Applied Physics Letters 87 (23), 2005 | 45 | 2005 |
| Co-implantation of Si+N into GaN for n-type doping Y Nakano, T Jimbo Journal of applied physics 92 (7), 3815-3819, 2002 | 44 | 2002 |
| Electrical characterization of acceptor levels in Mg-doped GaN Y Nakano, T Jimbo Journal of applied physics 92 (9), 5590-5592, 2002 | 42 | 2002 |
